What’s After 7nm?


The rollout of 10/7nm was a long time coming, and for good reason. It's hard stuff, and chipmakers have to be ready to take a giant step forward with new processes, tools, and to deal with a slew of physical effects that no longer can be handled by just guard-banding a design. The big question is what's next, when it will happen, and how much it will cost. Preparing for the next process node... » read more

Survey: Optimism Grows for EUV


The optimism is growing for extreme ultraviolet (EUV) lithography in the market, according to a pair of new surveys released by the eBeam Initiative, which also revealed some new and surprising data about mask writing tools and other photomask technology. In one of the surveys from the [getentity id="22818" e_name="eBeam Initiative"], respondents revealed that they are more optimistic than e... » read more

Manufacturing Bits: Aug. 29


Compact synchrotron EUV sources For some time, the industry has been exploring the development of next-generation power sources for extreme ultraviolet (EUV) lithography. ASML and Gigaphoton are separately developing EUV sources based on the more traditional and compact laser-produced-plasma (LPP) technology. Then, in R&D, others are exploring the development of futuristic EUV sources us... » read more

Four Foundries Back MRAM


Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology. GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly start... » read more

Blog Review: Aug. 23


Cadence's Madhavi Rao asks whether India should have more fabs and the role government policy should play. Synopsys' Kapil Rajpal checks out the Serial Peripheral Interface, which is emerging as a popular choice in automotive applications, and various vendor specific flavors. In a video, Mentor's Colin Walls explains inter-task communication and the basic mechanisms of how to pass data fr... » read more

Why Fabs Worry About Tool Parts


Achieving high yields with acceptable costs is becoming much more difficult as chipmakers migrate to next-generation 3D NAND and finFET devices—but not just because of rising complexity or lithography issues. To fabricate an advanced logic chip, for example, a wafer moves from one piece of equipment to another in what amounts to 1,000 process steps or more in a fab. Any glitch with the equ... » read more

What Is Spin Torque MRAM?


The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types. As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading. For this segment, P... » read more

The Week In Review: Manufacturing


Fab tools Lam Research held an analyst event this week. The company indicated that the industry is in the midst of a memory boom, including both DRAM and 3D NAND. According to Amit Daryanani, an analyst with RBC, here was one of the big takeaways at the event: “The memory spend portion of WFE is more sustainable than previously assumed due to end-market drivers such as big data, automation, ... » read more

Blog Review: Aug. 9


Cadence's Paul McLellan digs into a recently discovered vulnerability in the Broadcom Wi-Fi chip used in many smartphones and why it should be a wakeup call for SoC designers. Mentor's Craig Armenti considers whether work-in-process design data management is an asset or a liability. Synopsys' Thomas M. Tuerke notes that in code, as in medicine, proper hygiene is should be treated as a con... » read more

Manufacturing Bits: Aug. 8


Ferroelectric films Ferroelectric RAM (FRAM) is creating a buzz again. For years, FRAMs have been shipping for embedded applications, although the technology has taken a backseat to MRAM, phase-change and ReRAM. Using a ferroelectric capacitor to store data, FRAM is a nonvolatile memory with unlimited endurance. FRAM is faster than EEPROM and flash. FRAM performs an over-write function in ... » read more

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