tag: IEDM

Manufacturing Bits: Sept. 23
By Mark LaPedus - 23 Sep, 2014 - Comments: 0

The annual IEEE International Electron Devices Meeting (IEDM) will take place in San Francisco from Dec. 15-17. As usual, there will be presentations on the latest technologies in a number of fields, such as semiconductors, bio‐sensors, energy harvesting, power devices, sensors, magnetics, spintronics, two-dimensional electronics, among others. Here’s just some of the papers that will be pr... » read more

Interconnect Challenges Grow
By Mark LaPedus - 20 Feb, 2014 - Comments: 0

Qualcomm outlined the technology challenges facing mobile chip suppliers at a recent event. In no particular order, the challenges include the usual suspects—area scaling, power reduction, performance and cost. Another concern for Qualcomm is an often-overlooked part of the equation—the backend-of-the-line (BEOL). In chip production, the BEOL is where the interconnects are formed within ... » read more

The List Of Unknowns Grows After Silicon
By Katherine Derbyshire - 07 Feb, 2014 - Comments: 3

As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

Manufacturing Bits: Feb. 4
By Mark LaPedus - 04 Feb, 2014 - Comments: 0

Secrets of mass variation The General Conference on Weights and Measures will soon approve a plan to redefine the kilogram and other measurement units. The new definition for the kilogram will be based on the fixed numerical values of Planck’s constant (h). Supposedly, the new definition will solve the current problem. The kilogram is the only SI unit that is still described as an artif... » read more

Germanium wedge-FETs pry away misfit dislocations
By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

Manufacturing Bits: Jan. 21
By Mark LaPedus - 21 Jan, 2014 - Comments: 1

Redefining The Kilogram In 2011, the General Conference on Weights and Measures approved a plan to redefine the kilogram and other measurement units. The new definition for the kilogram will be based on the fixed numerical values of Planck’s constant (h), according to the National Institute of Standards and Technology (NIST), part of the U.S. Department of Commerce. NIST has taken steps t... » read more

What’s After Silicon?
By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

Manufacturing Bits: Jan. 7
By Mark LaPedus - 07 Jan, 2014 - Comments: 0

Climbing Terminator Robots Simon Fraser University has developed a family of climbing robots that mimic the stickiness of gecko lizard feet. Based on a “footpad terminator” adhesive technology, the robots could be used in space missions and on Earth. The climbing robot, called Abigaille, features six legs. This allows the robots to crawl on vertical and horizontal structures. The techno... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2013 - Comments: 0

Bringing Graphene Down To Earth For years, the semiconductor industry has been looking at graphene as a next-generation technology for a multitude of applications. One potential application, the graphene field-effect transistor (GFET), has been developed by various companies and universities. There are several advantages and disadvantages with GFETs. On one hand, GFETs have a higher mobilit... » read more

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