Stacked Nanosheets And Forksheet FETs


What comes next after gate-all-around FETs is still being worked out, but it likely will involve some version of stacked nanosheets. The design of advanced transistors is a tradeoff. On one hand, it takes less gate capacitance to control a thin channel. On the other hand, thin channels can’t carry as much drive current. Stacked nanosheet designs seek to reconcile these two objectives by... » read more

Automotive Lidar Technologies Battle It Out


Lidar is likely to be added to the list of sensors that future cars will use to help with navigation and safety, but most likely it won't be the large rotating mirror assembly on the top of vehicles. Newer solid-state radar technologies are being researched and developed, although it’s not yet clear which of these will win. “The benefits of lidar technology are well known dating back to ... » read more

The Great Quantum Computing Race


Quantum computing is heating up, as a growing number of entities race to benchmark, stabilize, and ultimately commercialize this technology. As of July 2021, a group from China appears to have taken the lead in terms of raw performance, but Google, IBM, Intel and other quantum computer developers aren’t far behind. All of that could change overnight, though. At this point, it's too early t... » read more

Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Manufacturing Bits: July 20


Interference EUV lithography ESOL has developed a standalone interference extreme ultraviolet (EUV) lithography tool for use in R&D applications. The system, called EMiLE (EUV Micro-interference Lithography Equipment), is primary used to speed up the development of EUV photoresists and related wafer processes. The system is different than ASML’s EUV lithography scanners, which are ... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

Week In Review: Manufacturing, Test


Lots more fabs and capacity The chip industry sees opportunity in shortages, and is racing to meet demand. SEMI reports 19 new worldwide high-volume fabs already have started construction, or will start by end of this year, and another 10 are scheduled in 2022. “Equipment spending for these 29 fabs is expected to surpass $140 billion over the next few years as the industry pushes to addre... » read more

Bumps Vs. Hybrid Bonding For Advanced Packaging


Advanced packaging continues to gain steam, but now customers must decide whether to design their next high-end packages using existing interconnect schemes or move to a next-generation, higher-density technology called copper hybrid bonding. The decision is far from simple, and in some cases both technologies may be used. Each technology adds new capabilities in next-generation advanced pac... » read more

Thinner Channels With 2D Semiconductors


Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Week In Review: Manufacturing, Test


Fab tools TEL plans to ship its leading-edge coater/developer system to the joint Imec-ASML research lab, which is working on high-NA extreme ultraviolet (EUV) lithography. The equipment will be integrated with the EXE:5000, ASML’s next-generation high-NA EUV lithography system. The 0.55 numerical aperture (NA) tool is slated to be operational in 2023. Today's EUV is in production, but there... » read more

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