Manufacturing Bits: Nov. 25


Lidar-on-a-chip At the upcoming IEEE International Electron Devices Meeting (IEDM), Samsung will present a paper on the industry’s first single-chip lidar beam scanner. (Go to this link and then look for paper 7.2, “Single-Chip Beam Scanner with Integrated Light Source for Real-Time Light Detection and Ranging,” J. Lee et al, Samsung.) Lidar, or light imaging, detection, and ranging, ... » read more

Week In Review: Manufacturing, Test


Fab tools PDF Solutions has entered into a definitive agreement to acquire Cimetrix. Under the terms, PDF will pay a cash amount of $35.0 million, net of cash on Cimetrix’s balance sheet as of closing, and subject to other closing adjustments. With the move, PDF will expand into new markets. Cimetrix is a provider of equipment connectivity products for smart manufacturing and Industry 4.0... » read more

EUV Challenges And Unknowns At 3nm and Below


The chip industry is preparing for the next phase of extreme ultraviolet (EUV) lithography at 3nm and beyond, but the challenges and unknowns continue to pile up. In R&D, vendors are working on an assortment of new EUV technologies, such as scanners, resists, and masks. These will be necessary to reach future process nodes, but they are more complex and expensive than the current EUV pro... » read more

Improving EUV Underlayer Coating Defectivity Using Point-Of-Use Filtration


Authors: Aiwen Wu (Entegris, Inc. — United States), Hareen Bayana (Entegris GmbH — Germany), Philippe Foubert (imec — Belgium), Andrea Chacko and Douglas Guererro (Brewer Science, Inc. — United States). This paper describes efforts to leverage different filtration parameters, including retention ratings and membrane materials, to understand their impact on EUV underlayer coating defe... » read more

Challenges Linger For EUV


Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

Manufacturing Bits: Oct. 12


MoSi2 pellicles for EUV Hanyang University has presented a paper that describes a novel molybdenum disilicide (MoSi2) pellicle membrane for use in extreme ultraviolet (EUV) lithography. With a 28nm thickness, a MoSi2 membrane has demonstrated a 89.33% transmittance for EUV lithography. The pellicle technology is still in R&D. MoSi2, which is a silicide of molybdenum, is a refractory cer... » read more

Manufacturing Bits: Oct. 6


High-NA EUV mask materials A team of researchers have presented a new paper on the tradeoffs of photomask absorber materials for high-NA extreme ultraviolet (EUV) lithography. In the paper, researchers concluded that the industry will likely require an alternative mask absorber stack for high-numerical aperture (high-NA) EUV lithography. Fraunhofer, Imec, ASML and Zeiss contributed to the... » read more

eBeam Initiative Surveys Report Upbeat Photomask Market Outlook


Every year, the eBeam Initiative conducts surveys that provide valuable insight into the key trends that are shaping the semiconductor industry. This year, industry luminaries representing 42 companies from across the semiconductor ecosystem participated in the 2020 eBeam Initiative Luminaries survey. 89% of respondents to the survey predict that photomask (mask) revenues in 2020 will stay the ... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs NXP has announced the grand opening of its 150mm (6-inch) RF gallium nitride (GaN) fab in Chandler, Ariz. This is said to be the most advanced fab dedicated to 5G RF power amplifiers in the United States. NXP’s new Chandler-based GaN fab is qualified now, with initial products ramping in the market and expected to reach full capacity by the end of 2020. GaN, a III-V techn... » read more

Manufacturing Bits: Aug. 10


EUV mask cleaning process TSMC has developed a new dry-clean technology for photomasks used in extreme ultraviolet (EUV) lithography, a move that appears to solve some major problems in the fab. TSMC and Samsung are in production with EUV lithography at advanced nodes, but there are still several challenges with the photomasks and other parts of the technology. Using 13.5nm wavelengths, EUV... » read more

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