Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Week in Review: IoT, Security, Auto


Internet of Things Arm made five 2019 predictions for the Internet of Things. They are: The intelligent home goes mainstream; personalized delivery options; improved health-care service; smart cities seek to improve revenue streams and citizen engagement; and smart buildings use more technology for efficiencies. The company also commissioned a worldwide survey of 2,000 consumers, conducted by ... » read more

Week In Review: Design, Low Power


The MIPI Alliance released MIPI I3C Basic v1.0, a subset of the MIPI I3C sensor interface specification that bundles 20 of the most commonly needed I3C features for developers and other standards organizations. The royalty-free specification includes backward compatibility with I2C, 12.5 MHz multi-drop bus that is over 12 times faster than I2C supports, in-band interrupts to allow slaves to not... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling


Authors: Sylvain Baudot, Sofiane Guissi, Alexey P. Milenin, Joseph Ervin, Tom Schram (IMEC and COVENTOR) In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning proces... » read more

Week In Review: Manufacturing, Test


Fab tools/manufacturing Lam Research has accepted Martin Anstice’s resignation as chief executive and a member of the board. Lam has named Tim Archer as president and chief executive effective immediately. Archer, who served as Lam’s president and chief operating officer, has been named to the board. One analyst provided a comment on the situation at Lam. “In our view, Mr. Archer is very... » read more

Week In Review: Manufacturing, Test


Chipmakers GlobalFoundries has announced that its advanced silicon-germanium (SiGe) offering is available for prototyping on 300mm wafers. GF’s SiGe technology has been shipping on its 200mm production line in Burlington, Vt. The technology, a 90nm SiGe process, is moving to 300mm wafers at GF’s Fab 10 facility in East Fishkill, N.Y. The SiGe technology is called 9HP. “The increasing ... » read more

Week In Review: Manufacturing, Test


R&D Imec and CEA-Leti have signed a memorandum of understanding under which the two R&D organizations will form a strategic partnership in the domains of artificial intelligence and quantum computing. Europe hopes to accelerate its effort in both AI and quantum computing. Market research TrendForce announced the ranking of top 10 fabless IC design houses worldwide based on their revenues f... » read more

Manufacturing Bits: Nov. 6


FISH metrology The University of Illinois at Urbana-Champaign and the Mayo Clinic have developed a new molecular probe for use in imaging cells in living organisms. The probe combines conventional fluorescence in situ hybridization (FISH) metrology techniques with compact quantum dots. This technology can measure and count ribonucleic acid (RNA) in cells and tissue without organic dyes. ... » read more

Week In Review: Manufacturing, Test


Chipmakers GlobalFoundries and the Chengdu municipality have signed an amendment and changed the strategy of their joint fab investment in Chengdu, China. Originally, GlobalFoundries was supposed to install 180nm/130nm processes in the China-based 300mm fab. The partners have decided to bypass that technology. Intead, the fab will start with GlobalFoundries’ 22nm FD-SOI process. “Ch... » read more

Can Graphene Be Mass Manufactured?


Since the isolation of graphene in 2004, the high mobility and unique transport properties of 2-dimensional semiconductors have tantalized physicists and materials scientists. Their in-plane carrier transport and lack of dangling bonds potentially can minimize line/edge scattering and other effects of extreme scaling. While 2-D materials cannot compete with silicon at current device dime... » read more

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