Executive Insight: K. Charles Janac


K. Charles Janac, chairman and CEO of Arteris, sat down with Semiconductor Engineering to talk about what's changing in the automotive market, the impact of big data, and heterogeneous cache coherency. What follows are excerpts of that discussion. SE: What are the big changes you're seeing in semiconductor design? Janac: There are a lot of changes right now. Mobility is slowing down and b... » read more

High-Bandwidth Memory


High-bandwidth memory (HBM) is a JEDEC-defined standard, dynamic random access memory (DRAM) technology that uses through-silicon vias (TSVs) to interconnect stacked DRAM die. In its first implementation, it is being integrated with a system-on-chip (SoC) logic die using 2.5D silicon interposer technology. This white paper explains HBM’s value proposition, and how these five companies make... » read more

7nm Fab Challenges


Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era. The first [getkc id="185" kc_name="finFETs"] were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled. In fact, 10nm finFETs from Samsung are expected to ramp by ye... » read more

The First Fully Configurable Cache-Coherent Interconnect Solution For SoCs


The last few decades have seen a massive growth in the number of CPU cores, computing clusters and other IP blocks in a SoC. This massive growth along with the need for complex chip integration has driven the need for sophisticated interconnects. SoC architects have employed a variety of methods from buses to crossbars to handcrafted NoCs with Lego-like blocks with varying degrees of success. T... » read more

An Architecture Synthesis Platform For Rapidly Evolving SoC Designs


Modern System-on-Chip (SoC) architects are faced with a number of serious challenges. First, the number of Semiconductor Intellectual Property (IP) blocks in SoC designs is growing continuously and increasing design complexity. With IP design reuse becoming more common, the mixing and matching of IP components is further compounding design complexity. Second, sophisticated SoC applications are ... » read more

5nm Fab Challenges


At a recent event, Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel’s nanowire FET, sometimes called a gate-all-around FET, is said to meet the device require... » read more

Interconnect Challenges Grow


It’s becoming apparent that traditional chip scaling is slowing down. The 16nm/14nm logic node took longer than expected to unfold. And the 10nm node and beyond could suffer the same fate. So what’s the main cause? It’s hard to pinpoint the problem, although many blame the issues on lithography. But what could eventually hold up the scaling train, and undo Moore’s Law, is arguably t... » read more

Patterning Interconnects At 10nm And Below


By Connie Duncan Chip manufacturers today build billions of transistors on a chip, delivering incredible computing power to consumers. What often gets overlooked is how hard it’s getting to create the many miles of ultra-thin copper wiring used to connect each of the transistors. Patterning these electrical pathways is becoming increasingly challenging as they grow denser and finer, and any ... » read more

Let’s Talk Open Source


Of late I have been hearing some rumblings about open source for the IoE. The sad part is that there is still talk about anything else. Even though the IoE remains a dream to many, the shrewd marketers already are scheming on how to make their product the one that leads that pack, and many see proprietary source code as a way to differentiate themselves. I can see that in any number of appli... » read more

Can Copper Revolutionize Interconnects Again?


Electromigration and resistivity present serious obstacles to interconnect scaling, as previously discussed. In a copper damascene process, grain growth is constrained by the narrow trenches into which copper is deposited. As the grain size approaches the mean free path of electrons in copper, electron scattering at sidewalls and grain boundaries increases and resistivity jumps. Meanwhile, incr... » read more

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