Estimating MOSFET Leakage From Low-Cost, Low-Resolution Fast Parametric Test


A method of estimating the subthershold component of MOSFET off-state current (Ioffs) using low-cost, low-resolution fast parallel parametric test is introduced. This method measures the subthreshold slope and uses it to estimate Ioffs. Measurements of individual transistors show a very good agreement between measured Ioffs and Ioffs estimated using our approach. For a simple pad-efficient tran... » read more

22nm Process Technology


Jamie Shaeffer, senior director of product line management at GlobalFoundries, talks about how FD-SOI compares with bulk technologies, where it will be used and why, and future stacking options. https://youtu.be/2i7GJRxcNRs » read more

System-Level Power Modeling Takes Root


Power, heat, and their combined effects on aging and reliability, are becoming increasingly critical variables in the design of chips that will be used across a variety of new and existing markets. As more processing moves to edge, where sensors are generating a tsunami of data, there are a number of factors that need to be considered in designs. On one side, power budgets need to reflect th... » read more

Supply Monitoring On 28nm & FinFET: The Challenges Posed


A Q&A with Moortec CTO Oliver King. What are the issues with supplies on advanced nodes? The supplies have been coming down, quicker than the threshold voltages which has led to less supply margin. In addition to this, the interconnects are becoming thinner and closer together, which is pushing up resistance and also capacitance. What is the effect of these issues? In short, it... » read more

UPF Power Domains And Boundaries


The Universal Power Format (UPF) plays a central role in mitigating dynamic and static power in the battle for low-power in advanced process technology. A higher process node is definitely attractive as more functionality integration is possible in a smaller die area at a lower cost. However, in reality, this comes at the cost of exponentially increasing leakage power. This is because the minim... » read more

The Hunt For A Low-Power PHY


Physics has been on the side of chipmakers throughout most of the lifetime of [getkc id="74" comment="Moore's Law"], but when dealing with the world outside the chip, physics is working against them. Pushing data at ever-faster rates through boards and systems consumes increasing amounts of power, but the power budget for chips has not been increasing. Could chips be constrained by their int... » read more

TFETs And/Or MOSFETs For Low-Power Design


As discussed in Reducing Subthreshold Swing With TFETs, papers at December’s IEEE Electron Device Meeting examined a variety of potential designs for tunneling transistors (TFETs). That focus continued at the recent CS International Conference. In particular, Nadine Collaert discussed IMEC’s work on InGaAs homo-junction devices. Many compound semiconductor devices depend on heterojunctio... » read more

Reducing Post-Placement Leakage With Stress-Enhanced Fill Cells


By Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan and Henrik Hovsepyan As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) power is used while the chip is performing various functions, while static (leakage) power is consumed by leakage current (Figure... » read more

2016 And Beyond


Greek mythology and Roman history are replete with soothsayers, some of whom got it right and others wrong. Cassandra was cursed that her predictions wouldn’t be believed, even though she predicted the Trojan horse. Caesar’s soothsayer predicted the demise of Julius Caesar during the Ides of March, which Caesar himself was skeptical about, but indeed he was murdered before the Ides passed. ... » read more

Micro-Architectural Exploration For Low Power Design


By Abishek Ranjan, Saurabh Shrimal and Sanjiv Narayan The adoption of finFET technology has created a tectonic shift in the chip design landscape. In addition to better performance (within the same power envelope) and higher reliability, finFETs have significantly reduced the leakage power at smaller technology nodes. At the same time, the share of dynamic power dissipation continues to rise... » read more

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