AI And High-NA EUV At 3/2/1nm

By Mark LaPedus - 16 Dec, 2020 - Comments: 1

Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

EUV Challenges And Unknowns At 3nm and Below

By Mark LaPedus - 19 Nov, 2020 - Comments: 1

The chip industry is preparing for the next phase of extreme ultraviolet (EUV) lithography at 3nm and beyond, but the challenges and unknowns continue to pile up. In R&D, vendors are working on an assortment of new EUV technologies, such as scanners, resists, and masks. These will be necessary to reach future process nodes, but they are more complex and expensive than the current EUV pro... » read more

Challenges Linger For EUV

By Mark LaPedus - 11 Nov, 2020 - Comments: 2

Mask/Lithography Issues For Mature Nodes

By Mark LaPedus - 22 Oct, 2020 - Comments: 0

eBeam Initiative Surveys Report Upbeat Photomask Market Outlook

By Jan Willis - 05 Oct, 2020 - Comments: 0

Every year, the eBeam Initiative conducts surveys that provide valuable insight into the key trends that are shaping the semiconductor industry. This year, industry luminaries representing 42 companies from across the semiconductor ecosystem participated in the 2020 eBeam Initiative Luminaries survey. 89% of respondents to the survey predict that photomask (mask) revenues in 2020 will stay the ... » read more

Challenges At 3/2nm

By Ed Sperling - 15 Sep, 2020 - Comments: 0

David Fried, vice president of computational products at Lam Research, talks about issues at upcoming process nodes, the move to EUV lithography and nanosheet transistors, and how process variation can affect yield and device performance. » read more

New Architectures, Much Faster Chips

By Ed Sperling and Ann Mutschler - 31 Aug, 2020 - Comments: 0

The chip industry is making progress in multiple physical dimensions and with multiple architectural approaches, setting the stage for huge performance increases based on more modular and heterogeneous designs, new advanced packaging options, and continued scaling of digital logic for at least a couple more process nodes. A number of these changes have been discussed in recent conferences. I... » read more

Development Of Planarizing Spin-On Carbon Materials For High-Temperature Processes

By Brewer Science - 20 Aug, 2020 - Comments: 0

Multilayer lithography is used for advanced semiconductor processes to pattern complex structures. As more and more procedures incorporate a high-temperature process, such as chemical vapor deposition (CVD), the need for thermally stable materials increases. For certain applications, a spin-on carbon (SOC) layer under the CVD layer is required to survive through a high-temperature process. ... » read more

Advanced Materials For High-Temperature Process Integration

By James Lamb - 16 Jul, 2020 - Comments: 0

From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically. One of the key pinch points is the tradeoff between planarization and the high-temperature stability required from carbon films used in patterning and post-patterning process integration. Patter... » read more

Super Planarizing Material For Trench And Via Arrays

By Brewer Science - 21 May, 2020 - Comments: 0

As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more

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tag: lithography