How eMRAM Addresses The Power Dilemma In Advanced-Node SoCs


By Rahul Thukral and Bhavana Chaurasia Our intelligent, interconnected, data-driven world demands more computation and capacity. Consider the variety of smart applications we now have. Cars can transport passengers to their destinations using local and remote AI decision-making. Robot vacuum cleaners keep our homes tidy, and smartwatches can detect a fall and call emergency services. With hi... » read more

Low-Power IC Design Without Compromise


In the process of creating ICs, the digital implementation stage is focused on meeting the performance, power, and area (PPA) targets defined for the design. Traditionally, when talking about PPA metrics, “performance” has been the primary focus, with power and area recovered where possible, after meeting timing. But as designs have moved to smaller, more advanced process nodes, and as s... » read more

How Low Can You Go? Pushing The Limits Of Transistors


Deep low voltage enablement of embedded memories and logic libraries to achieve extreme low power: Rising demand for cutting-edge mobile, IoT, and wearable devices, along with high compute demands for AI and 5G/6G communications, has driven the need for lower power systems-on-chip (SoCs). This is not only a concern for a device’s power consumption when active (dynamic power), but also when... » read more

Ternary LIM Operation of the TNAND and TNOR Universal Gates Using DG Feedback FETs


A technical paper titled "Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors" was published by researchers at Korea University. Abstract "In this study, the logic-in-memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double-gated feedback field-effect transistors. The component transistor... » read more

Improving Performance And Power With HBM3


HBM3 swings open the door to significantly faster data movement between memory and processors, reducing the power it takes to send and receive signals and boosting the performance of systems where high data throughput is required. But using this memory is expensive and complicated, and that likely will continue to be the case in the short term. High Bandwidth Memory 3 (HBM3) is the most rece... » read more

What Designers Need To Know About USB Low-Power States


In addition to performance and interoperability, achieving low power has been one of the requirements for industry standards specifications. Some of the key specifications like Universal Serial Bus (USB), PCI Express (PCIe), and MIPI have defined power saving features for burst traffic. This whitepaper explains how Synopsys USB IP offers low power using various low power states that go beyond t... » read more

Addressing Three Big Challenges In Silicon Realization


There is no better way to gain insight into prevailing technical challenges than bringing together industry experts to share experiences and proposed solutions. Silicon realization—the ability to design and build today’s complex semiconductors—is one domain with no shortage of challenges. The quest for the best power, performance, and area, and delivery of first-time-right silicon, requir... » read more

Accelerating IoT Designs: Designing For Low Power In The Era Of Smart Everything


Most of us have become accustomed to interacting with the ubiquitous technology ecosystem daily (if not hourly). From fitness trackers, smart vacuums, and semi-autonomous vehicles to the smart home devices that wake us up every morning, there’s no denying that the internet of things (IoT) boom has proliferated in every aspect of our lives. At the core of this instant, at-our-fingertips conn... » read more

How Low Can You Go? Pushing The Limits Of Transistors


Rising demand for cutting-edge mobile, IoT, and wearable devices, along with high compute demands for AI and 5G/6G communications, has driven the need for lower power systems-on-chip (SoCs). This is not only a concern for a device’s power consumption when active (dynamic power), but also when the device is not active (leakage power). This highly competitive industry provides significant rewar... » read more

Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET


A new technical paper titled "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET" was published by researchers at Chungnam National University and Korea Polytechnic College. "This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silic... » read more

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