tag: Lund University

Chip Industry Technical Paper Roundup: Jan. 16
By Liz Allan - 16 Jan, 2024 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=188 /] More ReadingTechnical Paper Library home » read more

Ferroelectric Tunnel Junctions In Crossbar Array Analog In-Memory Compute Accelerators
By Technical Paper Link - 11 Jan, 2024 - Comments: 0

A technical paper titled “Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators” was published by researchers at Lund University. Abstract: "Neuromorphic computing has seen great interest as leaps in artificial intelligence (AI) applications have exposed limitations due to heavy memory access, with the von Neumann computing architecture. The parallel in-memory comp... » read more

Chip Industry’s Technical Paper Roundup: May 16
By Linda Christensen - 16 May, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=103 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us... » read more

Performance Of Analog In-Memory Computing On Imaging Problems
By Technical Paper Link - 09 May, 2023 - Comments: 0

A technical paper titled "Accelerating AI Using Next-Generation Hardware: Possibilities and Challenges With Analog In-Memory Computing" was published by researchers at Lund University and Ericsson Research. Abstract "Future generations of computing systems need to continue increasing processing speed and energy efficiency in order to meet the growing workload requirements under stringent en... » read more

Reconfigurability and NTC-based Signal Modulation Within a Single Ferroelectric TFET
By Technical Paper Link - 09 May, 2023 - Comments: 0

A new technical paper titled "Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor" was published by researchers at Lund University in Sweden. Abstract: "Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we ... » read more

Research Bits: Feb. 28
By Susan Rambo - 28 Feb, 2023 - Comments: 0

Single-molecule switch An international team of researchers have demonstrated a switch on a single fullerene molecule. Using a laser, the team switched the path of an incoming electron. “What we’ve managed to do here is control the way a molecule directs the path of an incoming electron using a very short pulse of red laser light,” said Project Researcher Hirofumi Yanagisawa from the Uni... » read more

Technical Paper Round-up: August 8
By Linda Christensen - 08 Aug, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Improving 5G
By NI - 08 May, 2017 - Comments: 0

The Challenge: By 2020, Cisco forecasts that 5.5 billion people will own mobile phones. In the United Kingdom alone, tens of millions of these mobile users will each consume 20 GB of data per month and use more than 25 different smart devices in their daily routines. Factor in data-hungry applications like 4K video, driverless vehicles, smart factories, and broadband access expanding to the mos... » read more

TFETs Cut Sub-Threshold Swing
By Katherine Derbyshire - 16 Mar, 2017 - Comments: 0

One of the main obstacles to continued transistor scaling is power consumption. As gate length decreases, the sub-threshold swing (SS) — the gate voltage required to change the drain current by one order of magnitude — increases. As Qin Zhang, Wei Zhao, and Alan Seabaugh of Notre Dame explained in 2006, SS faces a theoretical minimum of 60 mV/decade at room temperature in conventional MO... » read more

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