Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh Environments


On the example of a 28nm SRAM array, this work presents a novel reliability study which takes into account the effect of externally applied mechanical stress in circuit simulations. This method is able to predict the bit failures caused by the stress via the piezoresistive effect. The stability of each single SRAM cell is simulated using static noise margin. Finally, the whole array’s behavio... » read more

Betting On Wafer-Level Fan-Outs


Advanced packaging is starting to gain traction as a commercially viable business model rather than just one more possible option, propelled by the technical difficulties in routing signals at 10nm and 7nm and skyrocketing costs of device scaling on a single die. The inclusion of a [getkc id="202" kc_name="fan-out"] package for logic in Apple's iPhone 7, based on TSMC's Integrated Fan-Out (... » read more

Challenges In IC And Electronic Systems Verification


Power efficiency, unrealistic schedules, and cost-down considerations are increasingly the top challenges design teams must meet to deliver next generation electronic systems, whether it is for the mobile, server, or automotive market. In addition, a successful chip tapeout does not guarantee the eventual end-product’s success—there are many variables to take into account. In the first p... » read more