tag: memory

MRAM Process Development And Production Briefing
By Jeff Barnum - 10 Mar, 2020 - Comments: 0

By Dr. Meng Zhu, Dr. Roman Sappey, and Jeff Barnum MRAM (Magnetoresistive Random-Access Memory) is a type of non-volatile memory (NVM) that utilizes magnetic states to store information. The basic structure of MRAM is a magnetic-tunnel junction (MTJ), which consists of two ferromagnetic (FM) layers separated by an insulating tunnel barrier (Fig.1). When the magnetizations of the two magnetic... » read more

A New Breed Of Engineer
By Brian Bailey - 27 Feb, 2020 - Comments: 6

The industry loves to move in straight lines. Each generation of silicon is more-or-less a linear extrapolation of what came before. There are many reasons for this – products continue to evolve within the industry, adding new or higher performance interfaces, risk levels are lower when the minimum amount is changed for any chip spin, existing software is more likely to run with only minor mo... » read more

An Increasingly Complicated Relationship With Memory
By Brian Bailey - 27 Feb, 2020 - Comments: 4

The relationship between a processor and its memory used to be quite simple, but in modern SoCs there are multiple heterogeneous processors and accelerators, each needing a different means of accessing memory for maximum efficiency. Compromises are being made in order to preserve the unified programming model of the past, but the pressures are increasing for some fundamental changes. It does... » read more

2020 IC Outlook: Uncertainty
By Mark LaPedus - 24 Feb, 2020 - Comments: 0

After a downturn in 2019, the semiconductor and equipment industries looked promising at the start of 2020. In 2019, the downturn was primarily due to the memory markets, namely DRAM and NAND. Both DRAM and NAND saw lackluster demand and falling prices last year. At the start of 2020, though, the memory markets were beginning to recover. Unlike memory, the logic and foundry markets were s... » read more

Changes In AI SoCs
By Ed Sperling - 12 Feb, 2020 - Comments: 0

Kurt Shuler, vice president of marketing at ArterisIP, talks about the tradeoffs in AI SoCs, which range from power and performance to flexibility, depending on whether processing elements are highly specific or more general, and the need for more modeling of both hardware and software together. » read more

Logic Chip, Heal Thyself
By Susan Rambo And Ed Sperling - 11 Feb, 2020 - Comments: 0

If a single fault can kill a logic chip, that doesn’t bode well for longevity of complex multi-chip systems. Obsolescence in chips is not just an industry ploy to sell more chips. It is a fact of physics that chips don’t last more than a few years, especially if overheated, and hit with higher voltage than it can stand. The testing industry does a great job finding defects during manufac... » read more

Software In Inference Accelerators
By Ed Sperling - 10 Feb, 2020 - Comments: 0

Geoff Tate, CEO of Flex Logix, talks about the importance of hardware-software co-design for inference accelerators, how that affects performance and power, and what new approaches chipmakers are taking to bring AI chips to market. » read more

Balancing Flexibility And Quality In SRAM Verification
By Elven Huang - 30 Jan, 2020 - Comments: 0

Memory is an essential component of system-on-chip (SOC) designs, especially at advanced nodes. SoCs use a variety of memory block types, such as static random-access memory (SRAM) and dynamic RAM (DRAM), to perform computations. The SRAM blocks, which consist of an assembly of specialized calls that abut or overlap one another in a specific arrangement that complies with the circuit specificat... » read more

Speeding Up Process Optimization Using Virtual Fabrication
By Coventor - 22 Jan, 2020 - Comments: 0

Author: Joseph Ervin Director, Semiconductor Process and Integration Lam Research Advanced CMOS scaling and new memory technologies have introduced increasingly complex structures into the device manufacturing process. For example, the increase in NAND memory layers has achieved greater vertical NAND scaling and higher memory density, but has led to challenges in high aspect ratio etch patte... » read more

Power/Performance Bits: Dec. 31
By Jesse Allen - 31 Dec, 2019 - Comments: 0

Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

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