tag: MOSFETs

Short-Circuit Ruggedness In SiC MOSFETs
By Zhihui Yuan - 13 Sep, 2021 - Comments: 1

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices
By Peter Friedrichs - 08 Apr, 2021 - Comments: 0

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

IC Materials For Extreme Conditions
By Katherine Derbyshire - 18 Mar, 2021 - Comments: 1

The number of materials being researched for chips used in extreme environments, such as landing on the planet Venus, is growing. While GaN has captured much of the attention for power conversion circuits, it's just one of several applications for semiconductors in extreme environments. The high voltage, high temperature, and caustic atmospheres found in many industrial and aerospace environ... » read more

Power Packaging Trends And The 48V Ecosystem
By Ajay Sattu - 22 Oct, 2020 - Comments: 0

With each passing year, emerging growth application areas such as automotive, cloud computing, industrial automation, and telecom (5G) infrastructure are garnering more attention. Although the application segments are different, there is a commonality in how voltage conversion and power distribution are achieved at the system level. System demands are becoming more important to reduce an effe... » read more

Improving Reliability For GaN And SiC
By Mark LaPedus - 18 Jun, 2020 - Comments: 2

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

High-Performance 300 kW 3-Phase SiC Inverter Based On Next Generation Modular SiC Power Modules
By Wolfspeed, a Cree Company - 21 May, 2020 - Comments: 0

Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of silicon carbide (SiC) MOSFETs. The inverter was designed with a holistic approach with careful consideration of module specifications, busbar technology, DC link capacitors, and a high-performance... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 03 Apr, 2020 - Comments: 0

Fab tool shipping costs The coronavirus is impacting semiconductor equipment companies. Many have withdrawn their previous forecasts. “It has also led to a rise in shipping costs,” said Krish Sankar, an analyst with Cowen, in a research note. Most semiconductor equipment and components are shipped via air, according to Sankar. The exception is flat-panel display equipment and other sys... » read more

The Ins And Outs Of Silicon Carbide
By Ed Sperling - 19 Mar, 2020 - Comments: 0

John Palmour, CTO at Cree, sat down with Semiconductor Engineering to talk about silicon carbide, how it compares to silicon, what's different from a design and packaging standpoint, and where it's being used. What follows are excerpts of that conversation. SE: SiC is well-understood in power electronics and RF, but is the main advantage the ability to run devices hotter than silicon, or is ... » read more

System-Level Electro-Thermal Analysis of RDS(ON) for Power MOSFET
By Cadence - 11 Mar, 2020 - Comments: 0

Authors: Rajen Murugan1, Nathan Ai2, and C.T. Kao2 1 Texas Instruments, Inc., Dallas, Texas, 75044, USA 2 Cadence Design Systems, Santa Clara, California, USA A coupled-electro-thermal RDS(ON) (drain to source ON resistance) co-analysis methodology for Power MOSFET is proposed. The methodology contains two functional modules: 1) physical field solvers and 2) equivalent circuit/network so... » read more

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