Week In Review: Design, Low Power


Synopsys acquired Silicon Frontline Technology, a provider of an electrical layout verification solution for mixed-signal and analog designs, large-scale power semiconductor devices, and electrostatic discharge protection networks. "This acquisition enables Synopsys to extend the capabilities of our design analysis portfolio and help build out a system-level electrical analysis platform. We als... » read more

Week In Review: Design, Low Power


Worldwide semiconductor revenue increased 1.1% in 2022 to $601.7 billion, up from $595 billion in 2021, according to preliminary results from Gartner. The combined revenue of the top 25 semiconductor vendors increased 2.8% in 2022 and accounted for 77.5% of the market. The memory segment posted a 10% revenue decrease. Analog showed the strongest growth, up 19% from 2021, followed by discretes, ... » read more

Week In Review: Design, Low Power


The U.S. Commerce Department's Bureau of Industry and Security (BIS) issued new export controls on EDA software aimed at designing gate-all-around FETs, which manufacturers plan to implement starting at 3nm (Samsung) and 2nm (Intel and TSMC). Specifically, the ruling controls export of software that is specially designed for implementing RTL to GDSII (or an equivalent standard) for GAA FET desi... » read more

Week in Review: Manufacturing, Test


Fab capacity STMicroelectronics and GlobalFoundries inked a deal to build a new jointly-operated 300mm fab adjacent to ST’s existing 300mm facility in Crolles, France. This facility is targeted to ramp at full capacity by 2026, with up to 620,000 300mm wafer per year production at full build-out (~42% ST and ~58% GF). The new facility will support several technologies, with a special focus... » read more

Week In Review: Design, Low Power


Tools & IP Cadence will acquire Future Facilities, a provider of electronics cooling analysis and energy performance optimization solutions for data center design and operations using physics-based 3D digital twins. Future Facilities’ product portfolio includes an electronics thermal solution, as well as computational fluid dynamics (CFD) electronics cooling simulation technology that op... » read more

Week In Review: Auto, Security, Pervasive Computing


Automotive, mobility The head of Tesla’s Autopilot division — Andrej Karpathy — resigned from the company after Tesla laid off 200 people in its Autopilot division and the U.S. National Highway Transportation Safety Administration broadened its safety investigation of Tesla’s Autopilot. The NHTSA last month broadened its August 2021 investigation, which was looking at why Tesla cars on... » read more

Week in Review: Manufacturing, Test


Industry Numbers NAND flash memory is forecast to hit US $83 billion this year, an increase of 24%. DRAM is projected to hit $118 billion, up 25%, according to a recent Yole report. Both are historic records. DRAM and NAND revenues are expected to be a $260 billion market in 2027 (combined), with advanced technologies such as EUV lithography, hybrid bonding and 3D DRAM driving this. SEMI in... » read more

Week In Review: Design, Low Power


Tools & IP MIPS announced its first products based on the RISC-V ISA. The eVocore IP cores are designed to provide a flexible foundation for heterogeneous compute, supporting combinations of eVocore processors as well as other accelerators, with a Coherence Manager that maintains L2 cache and system-level coherency between all cores, main memory, and I/O devices. They target high-performan... » read more

Inspecting And Testing GaN Power Semis


As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

GaN Application Base Widens, Adoption Grows


Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor applications due to its wide bandgap, enabling fast-charging, very high speeds, and much smaller form factors than silicon-based chips. Unlike silicon carbide (SiC), another wide-bandgap technology, GaN is a lateral rather than a vertical device. GaN tops out at about 900 volts, which limits its use in ... » read more

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