Investigating The Ru/Ta Bilayer As An Alternative EUV Absorber To Mitigate Mask 3D Effects

A technical paper titled “Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective” was published by researchers at KU Leuven and imec. Abstract: "The optical properties and geometry of EUV mask absorbers play an essential role in determining the imaging performance of a mask in EUV lithography. Imaging metrics, including Normalized Imag... » read more

EUV’s Uncertain Future At 3nm And Below

Several foundries have moved extreme ultraviolet (EUV) lithography into production at both 7nm and 5nm, but now the industry is preparing for the next phase of the technology at 3nm and beyond. In R&D, the industry is developing new EUV scanners, masks and resists for the next nodes. 3nm is slated for 2022, followed by 2nm a year or two later. Nonetheless, it will require massive funding... » read more

Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV

By Alessandro Vaglio Preta, Trey Gravesa, David Blankenshipa, Kunlun Baib, Stewart Robertsona, Peter De Bisschopc, John J. Biaforea a) KLA-Tencor Corporation, Austin, TX 78759, U.S.A. b) KLA-Tencor Corporation, Milpitas, CA 95035, U.S.A. c) IMEC, Kapeldreef 75, 3000, BE ABSTRACT Stochastics effects are the ultimate limiter of optical lithography technology and are a major concern for n... » read more