3D Extraction Necessities For 5nm And Below

For most of my career in product marketing I’ve been focused on Static Timing Analysis (STA). It was, and still is, an area with a diverse set of topics including graph based analysis and path based analysis, on-chip variation modeling, delay calculation, evolving library models, etc. During those years I always understood that  parasitic extraction was a crucial element of STA and more impo... » read more

Massively Parallel Electrically Aware Design

In-design verification is opening new opportunities to shorten design cycles and maximize circuit performance. Whereas physical verification has traditionally required a tradeoff between accuracy and performance for larger designs, recent advances in large-scale distributed computing may offer an alternative. Cloud infrastructure needs are pushing the industry toward larger multi-core server ar... » read more

Calibre xACT Parasitic Extraction Supports Signal Integrity At Advanced Nodes

At advanced nodes, signal integrity analysis requires precise characterization, which in turn requires an accurate extracted netlist. Models that handle new impacts on parasitic extraction at advanced nodes, including multi-patterning, finFETs, and resistance and capacitance effects, must be used. Learn how the Calibre xACT extraction tool supports these advanced foundry device models and leadi... » read more

Next-Generation Parasitic Extraction For 16nm And Beyond

Advanced nodes and innovative process features such as finFET transistors require a leap forward in the performance and accuracy of analysis tools. The new Calibre xACT solution is a high-performance, high-accuracy parasitic extraction tool architected from the top-down for diverse IC design styles at advanced nodes. The Calibre xACT product delivers reference-level accuracy for leading-edge fi... » read more

How To Speed Signoff Extraction By 5X With Next-Generation Extraction Tool

Parasitic extraction, particularly in the digital world, is becoming an increasingly time-consuming process. Not surprising, considering the explosion in interconnect corners, increasing design sizes and number of parasitics, and complex modeling features at advanced nodes, including FinFETs. This paper discusses capabilities you should have in order to overcome parasitic extraction challenges,... » read more

Advanced Nodes Drive Changing EDA Requirements

With new technical requirements of today’s bleeding edge manufacturing processes propelling the ecosystem of semiconductor foundries, EDA tool suppliers and IP developers, work is being done behind the scenes like a well-conducted orchestra to make sure customer designs can flow through a foundry when the time comes. One of the areas in the design process where new processes are felt acute... » read more

The Week In Review: Design

Tools Cadence unveiled two new tools. The first is a rapid prototyping platform that the company claims will shorten bring-up time by 70%, with 4X improvements in capacity, with IEEE 1801 support for low-power verification through its emulation platform. The second is a single and multi-corner custom/analog extraction tool, which it claims will improve performance by 5X. The tool has been cert... » read more

28nm FinFETs?

One star of the upcoming 14/16nm process node is the introduction of the finFET, a fundamentally new transistor that overcomes many of the limitations associated with planar transistors. While these devices are more complex to construct—and the physical extraction processes associated with them is more complex due to an increased number of resistances and capacitances—they are seen as a tra... » read more

Bringing Electrical Info To Design’s Forefront

By Ann Steffora Mutschler To reflect the impact on transistors of smaller process nodes and the electrical effects that occur as a result, a shift is underway where the electrical analysis and verification that used to be done when the layout was complete is moving earlier in the design process. The analysis includes parasitic extraction of interconnect and device parasitics, electromigrati... » read more

Fixing DP Errors: Colors Or Rings

By Ann Steffora Mutschler With the move to the 20nm manufacturing node, double patterning (DP) became a requirement. In addition, topology changes occurred that demanded very regular structures, marking a significant departure from 28nm design. As a result of this new approach, new errors are popping up, such as DP violation loops, odd cycle violations and anchor path violations. Certain... » read more

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