Process Modeling Exploration for 8 nm Half-Pitch Interconnects

By Coventor - 17 Jul, 2019 - Comments: 0

In this paper, we simulate eSADP, eSAQP and iSAOP patterning options to enable fabrication of 8 nm Half-Pitch (HP) interconnects. We investigate the impact of process variations and patterning sensitivities on pitch walking and resistance performance. The overall yield is also calculated for eight line CDs as well as M2-via-M1 via segment resistance and compared for all options. Process sensiti... » read more

Controlling Variability Using Semiconductor Process Window Optimization

By Benjamin Vincent - 01 Jul, 2019 - Comments: 0

To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Lithography Options For Next-Gen Devices

By Mark LaPedus - 18 Apr, 2019 - Comments: 2

Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control

By Benjamin Vincent - 25 Mar, 2019 - Comments: 0

Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

Variation’s Long, Twisty Tail Worsens At 7/5nm

By Ed Sperling - 20 Sep, 2018 - Comments: 1

Variation is becoming a bigger challenge at each new node, but not just for obvious reasons and not always from the usual sources. Nevertheless, dealing with these issues takes additional time and resources, and it can affect the performance and reliability of those chips throughout their lifetimes. At a high level, variation historically was viewed as a mismatch between what design teams in... » read more

New Patterning Options Emerging

By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

More Lithography/Mask Challenges (Part 2)

By Mark LaPedus - 17 Apr, 2018 - Comments: 3

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

What the Experts Think

By Sandra Liu - 20 Dec, 2017 - Comments: 0

Coventor recently sponsored an expert panel discussion at IEDM 2017 to discuss how we might advance the semiconductor industry into the next generation of technology. The panel discussed alternative methods to solve fundamental problems of technology scaling, using advances in semiconductor architectures, patterning, metrology, advanced process control, variation reduction, co-optimization and ... » read more

Inside FD-SOI And Scaling

By Mark LaPedus - 15 Jun, 2017 - Comments: 5

Gary Patton, chief technology officer at [getentity id="22819" comment="GlobalFoundries"], sat down with Semiconductor Engineering to discuss FD-SOI, IC scaling, process technology and other topics. What follows are excerpts of that conversation. SE: In logic, GlobalFoundries is shipping 14nm finFETs with 7nm in the works. The company is also readying 22nm FD-SOI technology with 12nm FD-SOI ... » read more

Extending EUV Beyond 3nm

By Ed Sperling - 18 May, 2017 - Comments: 10

Jan van Schoot, senior principal architect at [getentity id="22935" comment="ASML"], sat down with Semiconductor Engineering to talk about how far EUV can be extended and where it is today. What follows are excerpts of that discussion. SE: High numerical aperture [gettech id="31045" comment="EUV"] has been in the works for some time as a way of extending EUV. How is this technology shaping... » read more

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tag: patterning

Process Modeling Exploration for 8 nm Half-Pitch Interconnects

Controlling Variability Using Semiconductor Process Window Optimization

Lithography Options For Next-Gen Devices

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control

Variation’s Long, Twisty Tail Worsens At 7/5nm

New Patterning Options Emerging

More Lithography/Mask Challenges (Part 2)

What the Experts Think

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Extending EUV Beyond 3nm

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