tag: Power semiconductor

Dynamic Characterization Of A Power Semiconductor Bare Chip
By Keysight - 26 Mar, 2025 - Comments: 0

Power semiconductor devices are used in a variety of forms, such as being packaged in Surface Mount Devices (SMDs) or power modules, and they find broad applications. Power semiconductor bare chips are loaded into these packages. It is desirable to characterize the bare chip before placing it in a package or a power module to expedite development. However, the small size, fragile structure, and... » read more

Extracting Parasitic Impedance Of Semiconductor Power Modules
By Ansys - 12 Mar, 2025 - Comments: 0

As a key component in energy conversion system, power semiconductor devices are widely used in various applications, e.g., electric vehicles, renewable energy conversion, and uninterrupted power supplies. The trend for power converter design is always toward higher power density. Power modules that integrate multiple semiconductor devices can meet this demand. It also reduces the compl... » read more

SiC Power Electronics Packaging: Floating Die Structure and Liquid Metal Fluidic Connection (Cambridge U. )
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging" was published by researchers at Cambridge University. Abstract "Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electroni... » read more

Custom Substrates Save Assembly Time, Resources
By QP Technologies - 20 Jun, 2024 - Comments: 0

Time-to-market (TTM) and performance are two of the most pressing issues in chip design and manufacturing. Designing devices for high-speed, high-performance applications requires immediate access to substrates so that product development can proceed quickly. Quick substrate access is also vital to validating intellectual property (IP) cores used in application-specific ICs (ASICs) – all of w... » read more

High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD
By Technical Paper Link - 27 Nov, 2023 - Comments: 0

A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor
By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Week In Review: Semiconductor Manufacturing, Test
By Gregory Haley - 21 Apr, 2023 - Comments: 0

GlobalFoundries filed suit in U.S. District Court in New York against IBM, accusing it of unlawfully disclosing IP and trade secrets to IBM partners, including Intel and Rapidus, potentially receiving hundreds of millions of dollars in licensing income and other benefits. The European Union released a €43 billion ($47 billion) plan for jumpstarting its semiconductor manufacturing industry,... » read more

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