New Patterning Options Emerging

By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

More Lithography/Mask Challenges (Part 2)

By Mark LaPedus - 17 Apr, 2018 - Comments: 3

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

DSA Re-Enters Litho Picture

By Mark LaPedus - 15 Mar, 2018 - Comments: 1

By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

Executive Insight: Wally Rhines (March 2018)

By Brian Bailey - 01 Mar, 2018 - Comments: 0

Wally Rhines, president and CEO of [getentity id="22017" e_name="Mentor, a Siemens Business"], sat down with Semiconductor Engineering to discuss a wide range of industry and technology changes and how that will play out over the next few years. What follows are excerpts of that conversation. SE: What will happen in the end markets? Rhines: The end markets are perhaps more exciting from a... » read more

Tech Talk: 7nm Litho

By Ed Sperling - 20 Jul, 2017 - Comments: 2

David Fried, chief technology officer at Coventor, digs into future scaling issues involving multi-patterning and new transistor types. https://youtu.be/FBnYRAL1xKY Related Stories Inside Next-Gen Transistors Coventor’s CTO looks at new types of transistors, the expanding number of challenges at future process nodes & the state of semiconductor development in China. Faster Time T... » read more

What Drives SADP BEOL Variability?

By Michael Hargrove - 18 May, 2017 - Comments: 0

Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are being used to meet the stringent patterning demands of advanced back-end-of-line (BEOL) technologies. For the 7nm technology node, patterning requirements include a metal pitch of 40nm or less. This ... » read more

Photoresist Shape In 3D

By Mustafa Akbulut - 20 Apr, 2017 - Comments: 0

Things were easy for integrators when the pattern they had on the mask ended up being the pattern they wanted on the chip. Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have changed that dramatically. Now, what you have on the mask determines only a part of what you will get at the end. You will only obtain your final product... » read more

Understanding How Small Variations In Photoresist Shape Significantly Impact Multi-Patterning Yield

By Coventor - 20 Apr, 2017 - Comments: 0

Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have been used to successfully increase semiconductor device density, circumventing prior physical limits in pattern density. However, the number of processing steps needed in these patterning schemes can make it difficult to directly translate a lithographic mask pattern to a fin... » read more

Patterning Problems Pile Up

By Mark LaPedus - 20 Mar, 2017 - Comments: 4

Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

Battling Fab Cycle Times

By Mark LaPedus - 16 Feb, 2017 - Comments: 9

The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

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