Research Bits: Dec. 24


Growing multilayered chips Researchers from MIT, Samsung Advanced Institute of Technology, Sungkyunkwan University, and University of Texas at Dallas developed a method to fabricate a multilayered chip with alternating layers of semiconducting material grown directly on top of each other. The approach enables high-performance transistors and memory and logic elements on any random crystalline ... » read more

Chip Industry’s Technical Paper Roundup: August 22


New technical papers added to Semiconductor Engineering’s library this week. [table id=129 /]   More Reading Technical Paper Library home » read more

Anode Interlayers To Reduce Interfacial Resistance Of Solid-State Li-Metal Batteries And Prevent Short-Circuit Formation


A technical paper titled “Design Strategies for Anodes and Interfaces Toward Practical Solid-State Li-Metal Batteries” was published by researchers at Samsung Advanced Institute of Technology. Abstract: "Solid-state Li-metal batteries (based on solid-state electrolytes) offer excellent safety and exhibit high potential to overcome the energy-density limitations of current Li-ion batteries... » read more

Chip Industry Technical Paper Roundup: August 15


New technical papers added to Semiconductor Engineering’s library this week. [table id=128 /] More Reading Technical Paper Library home » read more

Week In Review: Auto, Security, Pervasive Computing


Intel issued an advisory of a potential security vulnerability in some of its processors. The company recommends updating to the latest firmware version. NVIDIA unveiled its GH200 Grace Hopper platform, based on 144 Arm Neoverse cores and 282GB of HBM3e memory. Meanwhile, Chinese internet companies including Baidu, ByteDance, Tencent, and Alibaba ordered about $5 billion worth of A800 proces... » read more

A Chiplet-Based FHE Accelerator Design Enabling Scalability And Higher Throughput


A technical paper titled “REED: Chiplet-Based Scalable Hardware Accelerator for Fully Homomorphic Encryption” was published by researchers at Graz University of Technology and Samsung Advanced Institute of Technology. Abstract: "Fully Homomorphic Encryption (FHE) has emerged as a promising technology for processing encrypted data without the need for decryption. Despite its potential, its... » read more

Chip Industry’s Technical Paper Roundup: Mar. 28


New technical papers recently added to Semiconductor Engineering’s library: [table id=89 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p... » read more

Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories


A new technical paper titled "Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data" was published by researchers at UT Austin and Samsung Advanced Institute of Technology (SAIT). Abstract "With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conver... » read more

Technical Paper Round-up: August 8


New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

All-Solid-State Batteries: Substantial Deterioration of ASSBs Can Occur After High-Temperature Storage


New technical paper titled "Detrimental effect of high-temperature storage on sulfide-based all-solid-state batteries" was just published by researchers at Seoul National University, National Synchrotron Radiation Research Center (Taiwan), and Battery Material Lab at the Samsung Advanced Institute of Technology. According to this AIP article, "The team found storage as low as 70 degrees Cels... » read more

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