Chip Industry’s Technical Paper Roundup: November 6


New technical papers added to Semiconductor Engineering’s library this week. [table id=162 /] More Reading Technical Paper Library home » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories


A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Chip Industry’s Technical Paper Roundup: August 22


New technical papers added to Semiconductor Engineering’s library this week. [table id=129 /]   More Reading Technical Paper Library home » read more

A Chiplet-Based Fully Homomorphic Encryption Accelerator


A technical paper titled “CiFHER: A Chiplet-Based FHE Accelerator with a Resizable Structure” was published by researchers at Seoul National University. Abstract: "Fully homomorphic encryption (FHE) is in the spotlight as a definitive solution for privacy, but the high computational overhead of FHE poses a challenge to its practical adoption. Although prior studies have attempted to desig... » read more

Chip Industry’s Technical Paper Roundup: July 12


New technical papers recently added to Semiconductor Engineering’s library: [table id=117 /] (more…) » read more

DRAM Translation Layer, Mechanism for Flexible Address Mapping and Data Migration Within CXL-Based Memory Devices


A technical paper titled “DRAM Translation Layer: Software-Transparent DRAM Power Savings for Disaggregated Memory” was published by researchers at Seoul National University. Abstract: "Memory disaggregation is a promising solution to scale memory capacity and bandwidth shared by multiple server nodes in a flexible and cost-effective manner. DRAM power consumption, which is reported to be... » read more

Chip Industry’s Technical Paper Roundup: June 20


New technical papers added to Semiconductor Engineering’s library this week. [table id=112 /] » read more

Uncovering The Size, Structure, And Operation Of DRAM Subarrays And Showing Experimental Results Supporting The Cause Of Rowhammer


A technical paper titled “X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recen... » read more

Technical Paper Round-up: August 8


New technical papers added to Semiconductor Engineering’s library this week. [table id=44 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

All-Solid-State Batteries: Substantial Deterioration of ASSBs Can Occur After High-Temperature Storage


New technical paper titled "Detrimental effect of high-temperature storage on sulfide-based all-solid-state batteries" was just published by researchers at Seoul National University, National Synchrotron Radiation Research Center (Taiwan), and Battery Material Lab at the Samsung Advanced Institute of Technology. According to this AIP article, "The team found storage as low as 70 degrees Cels... » read more

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