tag: silicon carbide

Using OCD To Measure Trench Structures In SiC Power Devices
By Nick Keller - 08 Feb, 2024 - Comments: 0

You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design
By Shela Aboud - 22 Jan, 2024 - Comments: 0

Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Application-Oriented Testing Of SiC Power Semiconductors
By NI - 09 Jan, 2024 - Comments: 0

SiC (silicon carbide) has established itself as an important material in the semiconductor market because it has many outstanding properties. In comparison with silicon, SiC offers a higher electrical breakdown voltage, resulting in improved component performance and efficiency. It also allows for operation at higher temperatures, which makes heat dissipation easier and enables improved perform... » read more

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Research Bits: Nov. 28
By Jesse Allen - 28 Nov, 2023 - Comments: 0

Switchable photodetector and neuromorphic vision sensor Researchers from the Institute of Metal Research at the Chinese Academy of Sciences built a device that can be switched between being a photodetector and neuromorphic vision sensor by adjusting the operating voltage. The trench-bridged GaN/Ga2O3/GaN heterojunction array device exhibits volatile and non-volatile photocurrents at low and hi... » read more

Using Atomic Vacancies In Silicon Carbide To Measure The Stability And Quality Of Acoustic Resonators
By Technical Paper Link - 14 Nov, 2023 - Comments: 0

A technical paper titled “Spin-acoustic control of silicon vacancies in 4H silicon carbide” was published by researchers at Harvard University and Purdue University. Abstract: "Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Benefits Of Using Wireless Communication Technologies In Power Electronics Systems Employing AGDs
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “Wireless Control of Active Gate Drivers for Silicon Carbide power MOSFETs” was published by researchers at Norwegian University of Science and Technology (NTNU). Abstract: "Active Gate Drivers (AGDs) enhance controllability and monitoring of switching devices, especially for fast switching Silicon Carbide (SiC) power Metal-Oxide-Semiconductor Field-Effect Transis... » read more

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