Research Bits: June 18


Gallium nitride can take the heat Researchers from Massachusetts Institute of Technology (MIT), the UAE's Technology Innovation Institute, Ohio State University, Rice University, and Bangladesh University of Engineering and Technology investigated the performance of ohmic contacts in a gallium nitride (GaN) device at extremely high temperatures, such as those that would be required for devices... » read more

Chip Industry Technical Paper Roundup: June 10


New technical papers added to Semiconductor Engineering’s library this week. [table id=232 /] More ReadingTechnical Paper Library home » read more

GaN Devices: Properties and Performance At Extremely High Temperatures


A new technical paper titled "High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C" was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract "This Letter reports the stability of regrown and alloyed Ohmic contacts to A... » read more

Chip Industry Week In Review


By Susan Rambo, Gregory Haley, and Liz Allan SRC unfurled its Microelectronics and Advanced Packaging (MAPT) industry-wide 3D semiconductor roadmap, addressing such topics as advanced packaging, heterogeneous integration, analog and mixed-signal semiconductors, energy efficiency, security, the related foundational ecosystem, and more. The guidance is the collective effort of 300 individuals ... » read more

Week In Review: Design, Low Power


Tools Cadence teamed up with Tower Semiconductor to release a silicon-validated SP4T RF SOI switch reference design flow using the Cadence Virtuoso Design Platform and RF Solution. The reference design flow targets advanced 5G wireless, wireline infrastructure, and automotive IC product development and include a set of mixed-signal and RF design, simulation, system analysis and signoff tools t... » read more