tag: TEL

EUV’s Uncertain Future At 3nm And Below
By Mark LaPedus - 21 May, 2020 - Comments: 5

Several foundries have moved extreme ultraviolet (EUV) lithography into production at both 7nm and 5nm, but now the industry is preparing for the next phase of the technology at 3nm and beyond. In R&D, the industry is developing new EUV scanners, masks and resists for the next nodes. 3nm is slated for 2022, followed by 2nm a year or two later. Nonetheless, it will require massive funding... » read more

Consideration Of Missing Defect Suppression Technique In EUV Hole Patterning
By TEL - 21 May, 2020 - Comments: 0

This study focused on the defect behavior analysis with CD variation on EUV via hole pattern using photolithographic process and etch transfer performance. While defect requirements are not as stringent for memory devices, logic devices must be defect-free. Currently, a defect which comes from the process or material can only be detected by top-down inspection approach, however, it is difficult... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 15 May, 2020 - Comments: 0

Chipmakers TSMC has announced its intention to build and operate an advanced semiconductor fab in the U.S. The fab, to be built in Arizona, will utilize TSMC’s 5nm technology and will produce 20,000 wafers per month. TSMC’s total spending on this project will be approximately $12 billion from 2021 to 2029. Construction is planned to start in 2021 with production targeted to begin in 202... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 01 May, 2020 - Comments: 0

Fab tools The U.S. Department of Commerce has announced new export control actions to prevent China, Russia, and Venezuela from obtaining U.S. technology for military purposes. This expands the “Military End Use/User Controls (MEU)” license requirement controls on China, Russia, and Venezuela, covering military end-users, as well as semiconductor equipment, sensors and other technologies. ... » read more

Scaling CMOS Image Sensors
By Mark LaPedus - 20 Apr, 2020 - Comments: 5

After a period of record growth, the CMOS image sensor market is beginning to face some new and unforeseen challenges. CMOS image sensors provide the camera functions in smartphones and other products, but now they are facing scaling and related manufacturing issues in the fab. And like all chip products, image sensors are seeing slower growth amid the coronavirus outbreak. Manufactured a... » read more

Metrology Challenges For Gate-All-Around
By Mark LaPedus - 16 Apr, 2020 - Comments: 3

Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

Making Chips At 3nm And Beyond
By Mark LaPedus and Ed Sperling - 16 Apr, 2020 - Comments: 4

Select foundries are beginning to ramp up their new 5nm processes with 3nm in R&D. The big question is what comes after that. Work is well underway for the 2nm node and beyond, but there are numerous challenges as well as some uncertainty on the horizon. There already are signs that the foundries have pushed out their 3nm production schedules by a few months due to various technical issu... » read more

Improving EUV Process Efficiency
By Mark LaPedus - 19 Mar, 2020 - Comments: 2

The semiconductor industry is rethinking the manufacturing flow for extreme ultraviolet (EUV) lithography in an effort to improve the overall process and reduce waste in the fab. Vendors currently are developing new and potentially breakthrough fab materials and equipment. Those technologies are still in R&D and have yet to be proven. But if they work as planned, they could boost the flo... » read more

Moving To GAA FETs
By Katherine Derbyshire - 20 Feb, 2020 - Comments: 2

How do you measure the size of a transistor? Is it the gate length, or the distance between the source and drain contacts? For planar transistors, the two values are approximately the same. The gate, plus a dielectric spacer, fits between the source and drain contacts. The contact pitch, limited by the smallest features that the lithography process can print, determines how many transistors ... » read more

5/3nm Wars Begin
By Mark LaPedus - 23 Jan, 2020 - Comments: 6

Several foundries are ramping up their new 5nm processes in the market, but now customers must decide whether to design their next chips around the current transistor type or move to a different one at 3nm and beyond. The decision involves the move to extend today’s finFETs to 3nm, or to implement a new technology called gate-all-around FETs (GAA FETs) at 3nm or 2nm. An evolutionary step f... » read more

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