Unraveling The Mysteries At IEDM

By Mark LaPedus - 19 Dec, 2014 - Comments: 0

In some respects, the 2014 IEEE International Electron Devices Meeting (IEDM) was no different than past events. The event, held this week in San Francisco, included the usual and dizzying array of tutorials, sessions, papers and panels. On the leading-edge CMOS front, for example, the topics included [getkc id="82" kc_name="2.5D"]/[getkc id="42" kc_name="3D IC"] chips, III-V materials, [getkc ... » read more

Manufacturing Bits: Dec. 17

By Mark LaPedus - 17 Dec, 2013 - Comments: 0

Implantable TFETs At the recent IEEE International Electron Devices Meeting (IEDM) in Washington, D.C., a number of companies, R&D organizations and universities described new breakthroughs in perhaps the next big thing in semiconductors--the tunnel field-effect transistor (TFET). Aimed for the 5nm node, TFETs are steep sub-threshold slope transistors that can scale the supply voltages bel... » read more

Power/Performance Bits: Dec. 17

By Ann Mutschler - 17 Dec, 2013 - Comments: 0

Low-power tunneling transistor to enable high-performance devices To make fast and low-power computing devices possible for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing, a new type of transistor is needed. To this end, researchers at Penn State, the National Institute of Standards and Technology and specialty wafer fo... » read more

Getting Ready For High-Mobility FinFETs

By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

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tag: TFET

Unraveling The Mysteries At IEDM

Manufacturing Bits: Dec. 17

Power/Performance Bits: Dec. 17

Getting Ready For High-Mobility FinFETs

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