Defect Reduction At 7/5nm


Darin Collins, director of metrology at Brewer Science, talks about the cause of defects at advanced nodes and how material purity increasingly plays a role in overall quality and yield. » read more

Practical Methods To Overcome The Challenges Of 3D Logic Design


What should you do If you don’t have enough room on your floor to store all your old boxes? Luckily, we live in a 3D world, and you can start stacking them on top of each other. The Challenge: How can we shrink logic devices? Logic designers are currently facing even bigger challenges than you might be having in tidying up your storage area. Not only are logic cells highly packed together... » read more

Emulation-Driven Implementation


Tech Talk: Haroon Chaudhri, director of Prime Power at Synopsys, talks about how to shorten time to market and increase confidence in advanced-node designs, while also reducing the amount of guard-banding and improving design freedom. https://youtu.be/xT3CIqjnaBk » read more

Analog Migration Equals Redesign


Analog design has never been easy. Engineers can spend their entire careers focused just on phase-locked loops (PLLs), because to get them right the functionality of circuits need to be understood in depth, including how they respond across different process corners and different manufacturing processes. In the finFET era, those challenges have only intensified for analog circuits. Reuse, fo... » read more

EUV’s New Problem Areas


Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

The Next 5 Years Of Chip Technology


Semiconductor Engineering sat down to discuss the future of scaling, the impact of variation, and the introduction of new materials and technologies, with Rick Gottscho, CTO of [getentity id="22820" comment="Lam Research"]; Mark Dougherty, vice president of advanced module engineering at [getentity id="22819" comment="GlobalFoundries"]; David Shortt, technical fellow at [getentity id="22876" co... » read more

New Techniques To Analyze And Reduce Etch Variation


Time division multiplex (TDM) plasma etch processes (commonly referred to as Deep Reactive ION Etching [“DRIE”]) use alternating deposition and etch steps cyclically to produce high aspect ratio structures on a silicon substrate. These etch processes have been widely applied in the manufacturing of silicon MEMS devices, and more recently in creating through silicon vias in 3D silicon struct... » read more

Optimization Challenges For 10nm And 7nm


Optimization used to be a simple timing against area tradeoff, but not anymore. As we go to each new node the tradeoffs become more complicated, involving additional aspects of the design that used to be dealt with in isolation. Semiconductor Engineering sat down to discuss these issues with Krishna Balachandran, director of product management for low-power products at [getentity id="22032"... » read more

Atomic Layer Etch Heats Up


The atomic layer etch (ALE) market is starting to heat up as chipmakers push to 10nm and beyond. ALE is a promising next-generation etch technology that has been in R&D for the last several years, but until now there has been little or no need to use it. Unlike conventional etch tools, which remove materials on a continuous basis, ALE promises to selectively and precisely remove targete... » read more

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