中文 English

Inspecting, Testing, And Measuring SiC


Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Measuring FinFETs Will Get Harder


The industry is gradually migrating toward chips based on finFET transistors at 16nm/14nm and beyond, but manufacturing those finFETs is proving to be a daunting challenge in the fab. Patterning is the most difficult process for finFETs. But another process, metrology, is fast becoming one of the biggest challenges for the next-generation transistor technology. In fact, [getkc id="252" kc_n... » read more

Inside X-ray Metrology


Chipmakers are ramping up a new class of chip architectures, such as 3D NAND and finFETs. Measuring and characterizing the tiny structures in these technologies is a major challenge. It will not only take the traditional metrology tools, but also various X-ray techniques. To get a handle on X-ray metrology, Semiconductor Engineering recently discussed the trends with the following experts: ... » read more