Manufacturing Of Next-Generation Channel Materials

One of the many challenges for the IC developers is to change the channel material to increase transistor mobility. But what about manufacturing? Can LED-style epitaxy be migrated to high-volume silicon manufacturing? “The use of Ge and InGaAs quantum wells is an extension of the current strained Si strategy," said Aaron Thean, vice president of process technologies and director of the log... » read more

Re-Engineering The FinFET

The semiconductor industry is still in the early stages of the [getkc id="185" kc_name="finFET"] era, but the [getkc id="26" kc_name="transistor"] technology already is undergoing a dramatic change. The fins themselves are getting a makeover. In the first-generation finFETs, the fins were relatively short and tapered. In the next wave, the fins are expected to get taller, thinner and more re... » read more