Resist Sensitivity, Source Power, And EUV Throughput

In a recent article, I quoted 15 mJ/cm2 as the target sensitivity for EUV photoresists, and discussed the throughput that could be achieved at various source power levels. However, as a commenter on that article pointed out, reaching the 15 mJ/cm² target while also meeting line roughness requirements is itself a challenging problem. Because of the high energy of EUV photons, a highly sensitive... » read more

Challenges Grow For EUV

By Mark LaPedus In the late 1990s, a group led by Intel launched a consortium to propel extreme ultraviolet (EUV) lithography into the mainstream. Originally, the consortium, dubbed the EUV LLC, envisioned the advent of EUV scanners that would move into production at the 65nm node. Clearly, the now-defunct consortium underestimated the difficulties and challenges associated with EUV. ASM... » read more