Power Noise And Reliability Sign-off For The Sub-20nm FinFET Era

There is a greater focus on power noise and reliability simulations and sign-off as the complexity of SoC designs continue to increase with 100+ different voltage islands, clock and power gating techniques, and multiple IPs each operating on different clock and power domains, etc. The technology node migration from 40nm to 20nm is driving requirements for electro-migration (EM) and reliability ... » read more