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Ann Mutschler

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Ann Mutschler is senior executive editor at Semiconductor Engineering.

Author's Latest Posts

Power/Performance Bits: May 20
By Ann Mutschler - 20 May, 2014 - Comments: 0

Visualizing complex electronic states While producing the first detailed visualization — down to the level of individual atoms — of exactly how a material called sodium manganese dioxide that has shown promise for use in electrodes in rechargeable batteries behaves during charging and discharging, a team of researchers led by MIT has explained an exotic molecular state that may help in und... » read more

EDA Races To 7nm, Despite Litho Uncertainties
By Ann Mutschler - 16 May, 2014 - Comments: 0

It’s becoming almost painful to refer to the delay with EUV, but it certainly isn’t stopping anyone on the design side from tweaking design tools or working on test chips. Clearly, things are moving ahead to 7nm even though lithography plans aren't yet clear. Steve Carlson, group marketing director in Cadence’s Office of Chief Strategy, said with regard to EUV, “They have the power p... » read more

Power/Performance Bits: May 13
By Ann Mutschler - 13 May, 2014 - Comments: 0

More electricity out of solar cells When sunlight shines on today’s solar cells, much of the incoming energy is given off as waste heat rather than electrical current but in a few materials, extra energy produces extra electrons. According to researchers at MIT, this behavior could significantly increase solar-cell efficiency. The team has identified the mechanism by which the phenomenon ... » read more

System Bits: May 13
By Ann Mutschler - 13 May, 2014 - Comments: 0

Bringing hyperbolic metamaterials closer to reality Purdue Researchers have taken a step toward practical applications for hyperbolic metamaterials, which are ultra-thin crystalline films that could bring optical advances for microscopes, quantum computers and high-performance solar cells. Optical metamaterials harness clouds of electrons called surface plasmons to manipulate and control li... » read more

IP To Meet 2.5D Requirements
By Ann Mutschler - 08 May, 2014 - Comments: 1

The semiconductor industry is still in the early stages of evolution in the realm of 2.5D, but when these devices do come out, the IP used on them will have to be brand new, according to Javier DeLaCruz, senior director of engineering at eSilicon. “The IP causes the biggest risk that you’re going to have in this implementation,” he said. “Everything else in here for making those ASIC... » read more

Improving LP Verification Efficiency
By Ann Mutschler - 08 May, 2014 - Comments: 1

The addition of low power circuitry can create so many corner cases that many can escape even the best-written testbenches. This has driven the need for so many additional verification cycles to be run that there must be many datacenter managers at semiconductor companies wondering if it is a trick by the power companies to cause an equal amount of power to be consumed by low-power verification... » read more

Is My iPhone Hurting The Earth?
By Ann Mutschler - 08 May, 2014 - Comments: 1

Of course we all know that power is the number one consideration in SoC design today but despite the fact that it is so well accepted and felt acutely by design and verification teams, we are still missing the boat as far as the bigger picture. From the perspective of a wanna-be treehugger, I think we fall short in realizing the grand impact of all this focus on power savings. The very a... » read more

Power/Performance Bits: May 6
By Ann Mutschler - 06 May, 2014 - Comments: 0

Boosting image quality UCLA researchers have created a device based on a new material and manufacturing process that they say could lead to a significant leap in the quality of images on smartphones, computer displays, TVs and inkjet printers. The new material and manufacturing process are used to produce semiconductors that are essential to LCDs and organic light-emitting diode (OLED) disp... » read more

System Bits: May 6
By Ann Mutschler - 06 May, 2014 - Comments: 0

Nonlinear optical resonance The drive to develop ultrasmall and ultrafast electronic devices using a single atomic layer of semiconductors, such as transition metal dichalcogenides, has received a significant boost. Researchers with Berkeley Lab have recorded the first observations of a strong nonlinear optical resonance along the edges of a single layer of molybdenum disulfide. The existence ... » read more

Executive Insight: Wally Rhines
By Ann Mutschler - 05 May, 2014 - Comments: 1

Semiconductor Engineering sat down with Wally Rhines, chairman and CEO of Mentor Graphics, to discuss what is required for EDA to grow, key areas of opportunity for EDA growth and going against the grain. The interview is part of an ongoing series of in-depth interviews with top executives from all segments of the industry. SE: What keeps you awake at night? Rhines: Actually nothing keeps... » read more

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