High Electron Mobility in Strained GaAs Nanowires


Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

Always-On Sub-Microwatt Spiking Neural Network Based on Spike-Driven Clock- and Power-Gating for an Ultra-Low-Power Intelligent Device


Abstract: "This paper presents a novel spiking neural network (SNN) classifier architecture for enabling always-on artificial intelligent (AI) functions, such as keyword spotting (KWS) and visual wake-up, in ultra-low-power internet-of-things (IoT) devices. Such always-on hardware tends to dominate the power efficiency of an IoT device and therefore it is paramount to minimize its power diss... » read more

Taking 2.5D/3DIC Physical Verification To The Next Level


As package designs evolve, so do verification requirements and challenges. Designers working on multi-die, multi-chiplet stacked configurations in 2.5/3D IC designs can use Calibre 3DSTACK physical verification checks to verify die alignments for proper connectivity and electrical behavior. The Calibre 3DSTACK precheck mode enables design teams to find and correct basic implementation mistakes ... » read more

Manufacturing Bits: Dec. 21


Tiny electronic fountain pens Karlsruhe Institute of Technology (KIT) and Taiyuan University of Technology have developed what resembles a tiny electronic fountain pen, a technology that can pattern and deposit small structures on surfaces. The system from KIT and Taiyuan University is actually a high-precision tabletop microplotter, which is used to print or deposit materials for printed e... » read more

Power/Performance Bits: Dec. 21


Compact optical amplifier Researchers at Chalmers University of Technology propose a new optical amplifier design that is compact, high-performance, and doesn't generate excess noise. “We have developed the world's first optical amplifier that significantly enhances the range, sensitivity and performance of optical communication, that does not generate any excess noise – and is also com... » read more

Holistic FMEDA-Driven Safety Design And Verification For Analog, Digital, And Mixed-Signal Design


With state-of-the-art electronics propelling the automotive industry into the future, automotive OEMs require safety-certified semiconductors. The integration of these advanced technologies into cars drives a need for component suppliers to assess and audit the risk of the technologies they want to deploy. At the same time, safety requirements are constantly evolving and becoming more stringent... » read more

Blog Review: Dec. 21


Cadence's Paul McLellan points to Log4J, a logging utility with a new major vulnerability that could affect hundreds of millions of devices, what's being done to address it, and why the underlying problems may be around for decades. Siemens EDA's Ray Salemi continues explaining how to use Python for verification by checking out the Python logging module for pyuvm and how it compares to UVM r... » read more

Flexible USB4-Based Interface IP Solution For AI At The Edge


Consumers have become accustomed to smart devices that are powered by advances in artificial intelligence (AI). To expand the devices’ total addressable market, innovative device designers build edge AI accelerators and edge AI SoCs that support multiple use cases and integration options. This white paper describes a flexible USB4-based IP solution for edge AI accelerators and SoCs. The IP so... » read more

Identification of two-dimensional layered dielectrics from first principles


Abstract "To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittiv... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors


Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

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