category: Perfecting The Process

category: IoT, Security & Automotive

Understanding Electrical Line Resistance At Advanced Semiconductor Nodes
By Sandy Wen - 16 Dec, 2021 - Comments: 0

When evaluating shrinking metal linewidths in advanced semiconductor devices, bulk resistivity is not the sole materials property for deriving electrical resistance. At smaller line dimensions, local resistivity is dominated by grain boundary effects and surface scattering. Consequently, resistivity varies throughout a line, and resistance extraction needs to account for these secondary phenome... » read more

Using Process Modeling To Enhance Device Uniformity During Self-Aligned Quadruple Patterning
By Timothy Yang - 18 Nov, 2021 - Comments: 0

Despite the growing interest in EUV lithography, self-aligned quadruple patterning (SAQP) still holds many technical advantages in pattern consistency, simplicity, and cost. This is particularly true for very simple and periodic patterns, such as line & space patterns or hole arrays. The biggest challenge of SAQP is the inherently asymmetric mask shape. This asymmetry can create structural ... » read more

Evaluating The Impact Of STI Recess Profile Control On Advanced FinFET Performance
By Yu De Chen - 21 Oct, 2021 - Comments: 0

Profile variation is one of the most important problems during semiconductor device manufacturing and scaling. These variations can degrade both chip yield and device performance.  Virtual fabrication can be used to study profile variation in a very effective and economical manner and avoid process cycle time and wafer cost in the fab. In this short article, we will review the impact of STI (s... » read more

Advancing To The 3nm Node And Beyond: Technology, Challenges And Solutions
By Michael Hargrove - 19 Aug, 2021 - Comments: 0

It seems like yesterday that finFETs were the answer to device scaling limitations imposed by shrinking gate lengths and required electrostatics. The introduction of finFETs began at the 22nm node and has continued through the 7nm node. Beyond 7nm, it looks like nanosheet device structures will be used for at least the 5nm and probably the 3nm nodes. The nanosheet device structure is the brainc... » read more

Using A Virtual DOE To Predict Process Windows And Device Performance Of Advanced FinFET Technology
By Qingpeng Wang - 03 Aug, 2021 - Comments: 0

By Qingpeng Wang, Yu De Chen, Cheng Li, Rui Bao, Jacky Huang, and Joseph Ervin Introduction With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the local etch rate on a wafer is dependent upon existing feature sizes and local pattern density. Uninten... » read more

Using Virtual Process Libraries To Improve Semiconductor Manufacturing
By Jeonghoon (James) Kim - 17 Jun, 2021 - Comments: 0

People think that semiconductor process simulation libraries should be developed using a perfect theoretical background that is strongly supported by empirical data. This might be true in academic research, where researchers are trying to develop a systematic approach to understanding a process mechanism. However, it is definitely not true in production fabs, where engineers need to quickly a... » read more

Principles, Applications, And The Future Of Piezoelectric MEMS
By Joan Asselot - 26 May, 2021 - Comments: 0

Piezoelectricity is a property of certain materials to become electrically polarized under strain and stress. This phenomenon has been studied extensively since it was first discovered in the mid-18th century. Piezoelectric materials can generate an electric charge in response to an applied mechanical stress and can also generate mechanical stress upon an applied electrical charge. These mater... » read more

Improving Your Understanding Of Advanced Inertial MEMS Design
By Chris Welham - 27 Apr, 2021 - Comments: 0

Micro-electrical-mechanical systems (MEMS) based inertial sensors are used measure acceleration and rotation rate. These sensors are integrated into units to measure motion, direction, acceleration or position, and can be found in a wide range of applications including smart phones, consumer electronics, medical devices, transportation systems, oil/gas exploration, military, aeronautical and sp... » read more

Overcoming Challenges In Next-Generation SRAM Cell Architectures
By Benjamin Vincent - 18 Mar, 2021 - Comments: 0

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each other in order to perform logic storage and other functions. The size of the 6T (6 Transistors) SRAM cell has shrunk steadily over the past decades, thanks to Moore’s Law and the size reduction of t... » read more

The Future Of FinFETs At 5nm And Beyond
By Assawer Soussou - 05 Mar, 2021 - Comments: 0

While contact gate pitch (GP) and fin pitch (FP) scaling continues to provide higher performance and lower power to finFET platforms, controlling RC parasitics and achieving higher transistor performance at technology nodes of 5nm and beyond becomes challenging. In collaboration with Imec, we recently used SEMulator3D virtual fabrication to explore an end-to-end solution to better underst... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy