Functional-Engineered MXene Transistors


A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Spin–Orbit Qubit With A Single Hole Electrostatically Confined In A Natural Silicon Metal-Oxide-Semiconductor Device


A new technical paper titled "A single hole spin with enhanced coherence in natural silicon" was published by researchers at Université Grenoble Alpes, CEA, LETI, and CNRS. Abstract: "Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however,... » read more

Detailed RF Characterization of Ultra-Thin Indium Oxide Transistors


A new technical paper titled "Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure" was published by researchers at Purdue University and won the 2022 Device Research Conference Best Student Paper Award (DRC 2022 held in June). According to this Purdue University news release, "In this work, the radio frequency (RF) performance of indium oxide transistors w... » read more

Scaling Down To 2nm: Using Microwaves For Efficient & Stable Doping


A new technical paper titled "Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit" was just published by researchers at National Taiwan University, Cornell University, TSMC, University of Valladolid, DSG Technologies, National Central University and National Yang Ming Chiao Tung University. A modified microwave was used... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML


Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Robust Latch Hardened Against QNUs for Safety-Critical Applications in 22nm CMOS Technology


A technical paper titled "Cost-Optimized and Robust Latch Hardened against Quadruple Node Upsets for Nanoscale CMOS" was just published by researchers at Anhui University, Hefei University of Technology, Anhui Polytechnic University, Kyushu Institute of Technology, and the University of Montpellier/CNRS. Abstract: "With the aggressive reduction of CMOS transistor feature sizes, the soft ... » read more

Stretchability of Integrated Thin Film Transistors (TFT)


A new technical paper titled "High density integration of stretchable inorganic thin film transistors with excellent performance and reliability" was published by researchers at Electronics and Telecommunications Research Institute (ETRI) in Korea. "In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embeddin... » read more

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)


A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors


A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more

State Of The Art And Recent Progress of Reconfigurable Electronic Devices Based on 2D Materials


A new technical paper titled "Emerging reconfigurable electronic devices based on two-dimensional materials: A review" was just published by researchers at TU Dresden, NaMLAb gGmbH, and RWTH Aachen University. Abstract "As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts an... » read more

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