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Detailed RF Characterization of Ultra-Thin Indium Oxide Transistors

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A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and won the 2022 Device Research Conference Best Student Paper Award (DRC 2022 held in June).

According to this Purdue University news release, “In this work, the radio frequency (RF) performance of indium oxide transistors with a high working frequency is characterized for the first time. A new record high transit frequency (fT) among amorphous metal oxide semiconductor transistors is reported with simultaneously high maximum frequency of power gain (fmax).”

Find the technical paper here. Published August 2022.

Citation: A. Charnas, J. Anderson, J. Zhang, D. Zheng, D. Weinstein and P. D. Ye, “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure,” 2022 Device Research Conference (DRC), 2022, pp. 1-2, doi: 10.1109/DRC55272.2022.9855782.



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