Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”.
Abstract Excerpt
“Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of optoelectronic devices. However, traditional masks like SiO2 and Si3N4 limit the design of high-contrast photonics in the infrared due to their high extinction coefficients at technologically relevant wavelengths. Consequently, there is a need to explore alternative mask materials to expand the selective area molecular beam epitaxy capabilities beyond those traditionally used. This study evaluates the deposition selectivity of the alternative materials Al2O3, TiO2, and HfO2, films with preferable spectral responses but higher surface reactivity. “
Find the technical paper here. June 2026.
García, Ashlee M., Byron D. Aguilar, William J. Doyle, Pernille Undrum Fathi, Federico Capasso, Daniel Wasserman, and Seth R. Bank. “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials.” arXiv:2606.02317, June 2026. https://doi.org/10.48550/arXiv.2606.02317.
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