Surface Modification for III-V Selective Area MBE of Non-Selective Mask Materials (UT Austin, Harvard)


Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”. Abstract Excerpt “Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3


A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more