Surface Modification for III-V Selective Area MBE of Non-Selective Mask Materials (UT Austin, Harvard)


Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”. Abstract Excerpt “Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel... » read more

Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition (Penn State, et al.)


A new technical paper titled "In-Operando Spatiotemporal Imaging of Coupled Film-Substrate Elastodynamics During an Insulator-to-Metal Transition" was published by researchers at Pennsylvania State University, Cornell University, Argonne National Lab, Georgia Tech and Forschungsverbund Berlin. Abstract "The drive toward non-von Neumann device architectures has led to an intense focus on ins... » read more