Surface Modification for III-V Selective Area MBE of Non-Selective Mask Materials (UT Austin, Harvard)


Researchers from University of Texas at Austin and Harvard University published “Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials”. Abstract Excerpt “Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge


A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway


A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

Sputtered transparent electrodes for optoelectronic devices: Induced damage and mitigation strategies


Abstract: Summary "Transparent electrodes and metal contacts deposited by magnetron sputtering find applications in numerous state-of-the-art optoelectronic devices, such as solar cells and light-emitting diodes. However, the deposition of such thin films may damage underlying sensitive device layers due to plasma emission and particle impact. Inserting a buffer layer to shield against such da... » read more