A new technical paper titled “High density integration of stretchable inorganic thin film transistors with excellent performance and reliability” was published by researchers at Electronics and Telecommunications Research Institute (ETRI) in Korea.
“In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embedding the devices into stretchable serpentine strings to defeat such trade-off. The embedded transistors do not hide from deformation and endure strain up to 100% by themselves; thus, integration density can be enhanced without sacrificing the stretchability,” according to the paper’s abstract.
Find the open access technical paper here.
Oh, H., Oh, JY., Park, C.W. et al. High density integration of stretchable inorganic thin film transistors with excellent performance and reliability. Nat Commun 13, 4963 (2022). https://doi.org/10.1038/s41467-022-32672-8.
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