Univ. of Manchester & Shandong Univ.–Synaptic Transistors


Research paper titled "Synaptic transistors with a memory time tunability over seven orders of magnitude" from researchers at The University of Manchester (UK) and Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, China. Abstract "The human brain is capable of short- and long-term memory with retention times ranging from a few second... » read more

OBJTs (Organic Bipolar Transistors) Based on Crystalline Rubrene Thin Films


New technical paper titled "Organic bipolar transistors" from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA Synchrotron. Abstract (Partial) "Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene ... » read more

Graphene Nanoribbon Transistors Using Hydrocarbon Seeds (University of Wisconsin-Madison)


New research paper titled "Graphene nanoribbons initiated from molecularly derived seeds" from researchers at University of Wisconsin-Madison with contributions from Argonne National Laboratory. Abstract "Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploi... » read more

Synchrotron S-ray Diffraction-based Non-destructive Nanoscale Mapping of Si/SiGe Nanosheets for GAA structures


New research paper titled "Mapping of the mechanical response in Si/SiGe nanosheet device geometries" from researchers at IBM T.J. Watson Research Center and Brookhaven National Laboratory. Sponsored by U.S. DOE. Abstract "The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibilit... » read more

Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides


New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more

Hybrid Sensing Platform w/Silicon Nanowires on a Fully Functional CMOS Chip Containing the Readout Electronics & Signal amplification


New technical paper titled "Multisite Dopamine Sensing With Femtomolar Resolution Using a CMOS Enabled Aptasensor Chip" from TU Dresden, Riken Quantitative Biological Center, Imperial College London, NaMLab gGmbH, ETH Zürich, MaxWell Biosystems AG, TU Wien, and Institute of Radiopharmaceutical Cancer Research. Abstract "Many biomarkers including neurotransmitters are found in external bo... » read more

NBTI & PBTI of MOSFETs


Technical paper titled "Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction" from researchers at Liverpool John Moores University. Abstract "CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. To optimize chip design, trade-offs between reliability, speed, power consumption, and cost must be carried out. This r... » read more

Nanosheet GeSn pTFTs: High Performance, Low Thermal Budget


New technical paper titled "Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor" from researchers at National Yang Ming Chiao Tung University and others. Abstract "High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole ... » read more

Design of a Mixed-signal ASIC for the front-end electronics of ionisation chambers


New technical paper titled "An Ultra Low Current Measurement Mixed-Signal ASIC for Radiation Monitoring Using Ionisation Chambers," by researchers at CERN. Abstract "Measurement of total ionizing dose in a radiation field is efficiently carried out by ionisation chambers. The paper details the design of a mixed-signal ASIC for the front-end electronics of ionisation chambers. A single c... » read more

Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique


New technical paper "Laser slice thinning of GaN-on-GaN high electron mobility transistors" from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba. Abstract "As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In... » read more

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