DRAM Scaling Challenges Grow


DRAM makers are pushing into the next phase of scaling, but they are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. There are efforts in R&D to extend the technology, and ultimate... » read more

New Trends In Wafer Bonding


Unable to scale horizontally, due to a combination of lithography delays and power constraints, manufacturers are stacking devices vertically. This has become essential as the proliferation of mobile devices drives demand for smaller circuit footprints, but the transition isn't always straightforward. Three-dimensional integration schemes take many forms, depending on the required interconne... » read more

Planning For Panel-Level Fan-out


Several companies are developing or ramping up panel-level fan-out packaging as a way to reduce the cost of advanced packaging. Wafer-level fan-out is one of several advanced packaging types where a package can incorporate dies, MEMS and passives in an IC package. This approach has been in production for years, and is produced in a round wafer format in 200mm or 300mm wafer sizes. Fan-out... » read more

Inspecting, Patterning EUV Masks


Semiconductor Engineering sat down to discuss lithography and photomask trends with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Thomas Scheruebl, director of strategic business development and product strategy at Zeiss; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What fol... » read more

Power Semi Wars Begin


Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

Making Random Variation Less Random


The economics for random variation are changing, particularly at advanced nodes and in complex packaging schemes. Random variation always will exist in semiconductor manufacturing processes, but much of what is called random has a traceable root cause. The reason it is classified as random is that it is expensive to track down all of the various quirks in a complex manufacturing process or i... » read more

What’s The Best Advanced Packaging Option?


As traditional chip designs become more unwieldy and expensive at each node, many IC vendors are exploring or pursuing alternative approaches using advanced packaging. The problem is there are too many advanced packaging options on the table already, and the list continues to grow. Moreover, each option has several tradeoffs and challenges, and all of them are still relatively expensive. ... » read more

Building An MRAM Array


MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture is based on CoFeB magnetic layers, with an MgO tunneling barrier. The reference layer should have zero net magnetization to make sure that it doesn’t influence the orientation of the free lay... » read more

Mask Making Issues With EUV


Semiconductor Engineering sat down to discuss lithography and photomask trends with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Thomas Scheruebl, director of strategic business development and product strategy at Zeiss; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What fol... » read more

The Race To Next-Gen 2.5D/3D Packages


Several companies are racing each other to develop a new class of 2.5D and 3D packages based on various next-generation interconnect technologies. Intel, TSMC and others are exploring or developing future packages based on one emerging interconnect scheme, called copper-to-copper hybrid bonding. This technology provides a way to stack advanced dies using copper connections at the chip level,... » read more

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