Chip Industry Technical Paper Roundup: Feb. 25

NVM-CIM accelerators; AI HW energy; TSV faults; Si/SiGe multi-layer stacks; BPR to suppress substrate leakage in CFETs; small-pitch interconnects; DRAM read disturbance; HW-aligned sparse attention architecture.

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New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators TSMC
Life-Cycle Emissions of AI Hardware: A Cradle-To-Grave Approach and Generational Trends Google
Low Cost TSV Repair Architecture Using Switch-Based Matrix for Highly Clustered Faults Yonsei University
Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices imec and Ghent University, et al.
Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET) Korea University and Sungkyunkwan University
Facilitating Small-Pitch Interconnects with Low-Temperature Solid-Liquid Interdiffusion Bonding Aalto University in Finland
Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance ETH Zurich and Rutgers University
Native Sparse Attention: Hardware-Aligned and Natively Trainable Sparse Attention DeepSeek, Peking University and University of Washington

Find all technical papers here.



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