A new technical paper titled “Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors” was published by researchers at University of Cambridge.
“This perspective analyses the state of the art on 2D TMD and dielectric interfaces, highlighting key challenges in depositing oxide dielectrics on top of atomically thin TMD semiconductors. We provide a critical summary of exotic dielectric materials reported for FETs based on 2D TMD—including methods for their integration with TMDs,” the paper states.
Find the technical paper here. July 2025.
Yan, Han, Lixin Liu, Leyi Loh, Manish Chhowalla, and Yan Wang. “Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors.” APL Electronic Devices 1, no. 3 (2025): 031501.
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