Dielectrics for 2D TMDs, Including Deposition Strategies And Emerging Dielectric Materials (Cambridge)


A new technical paper titled "Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors" was published by researchers at University of Cambridge. "This perspective analyses the state of the art on 2D TMD and dielectric interfaces, highlighting key challenges in depositing oxide dielectrics on top of atomically thin TMD semiconductors. We provide... » read more

Ultrafast Charge Transfer Cascade In Semiconductor Materials


A technical paper titled “Ultrafast Charge Transfer Cascade in a Mixed-Dimensionality Nanoscale Trilayer” was published by researchers at the National Renewable Energy Laboratory. Abstract: "Innovation in optoelectronic semiconductor devices is driven by a fundamental understanding of how to move charges and/or excitons (electron-hole pairs) in specified directions for doing useful work, ... » read more