InGaOx GAA transistor; 2D hybrid glaphene; simulating plasma.
Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability.
“We wanted our crystalline oxide transistor to feature a ‘gate-all-around’ structure, whereby the gate, which turns the current on or off, surrounds the channel where the current flows,” said Anlan Chen, a member of the Masa Kobayashi Lab at the University of Tokyo, in a press release. “By wrapping the gate entirely around the channel, we can enhance efficiency and scalability compared with traditional gates.”
The team used atomic layer deposition to coat the channel region of a gate-all-around transistor with a thin film of InGaOx. After deposition, the film was heated to transform it into the crystalline structure needed for electron mobility.
“Our gate-all-around MOSFET, containing a gallium-doped indium oxide layer, achieves high mobility of 44.5 cm2/Vs,” added Chen. “Crucially, the device demonstrates promising reliability by operating stably under applied stress for nearly three hours. In fact, our MOSFET outperformed similar devices that have previously been reported.” [1]
Researchers at Rice University, Banaras Hindu University, University of Sussex, Pennsylvania State University, and Universidade Federal de Minas Gerais developed a 2D hybrid material by integrating graphene and silica glass into a single, stable compound they call glaphene.
“The layers do not just rest on each other ⎯ electrons move and form new interactions and vibration states, giving rise to properties neither material has on its own,” said Sathvik Ajay Iyengar, a doctoral student at Rice, in a statement. “It opens the door to combining entirely new classes of 2D materials — such as metals with insulators or magnets with semiconductors — to create custom-built materials from the ground up.”
A two-step, single-reaction method was used to grow glaphene using a liquid chemical precursor that contains both silicon and carbon. By tuning oxygen levels during heating, the team first grew graphene then shifted conditions to favor the formation of a silica layer.
In further investigations, they found that the graphene and silica layers interact and bond in a unique way, partially sharing electrons across the interface and changing the material’s structure and behavior, turning a metal and an insulator into a new type of semiconductor. [2]
Researchers from Princeton Plasma Physics Laboratory, Applied Materials, University of Alberta, and Los Alamos National Laboratory developed a faster, more reliable way to simulate inductively coupled plasmas used in chip manufacturing.
“This new simulation allows us to model larger plasmas quickly while accurately conserving energy, helping to ensure the results reflect real physical processes rather than numerical artifacts,” said Igor Kaganovich, a principal research physicist at PPPL, in a release.
“The simulation is known as a particle-in-cell code because it tracks individual particles (or small groups of particles clumped together as so-called macroparticles) while they move in space from one grid cell to another,” explained PPPL’s Rachel Kremen in a release. “This approach works particularly well for the plasmas used in industrial devices where the gas pressure is low. A fluid approach doesn’t work for such plasmas because it uses average values instead of tracking individual particles.” [3]
[1] A. Chen, M. Kobayashi, et al. “A Gate-All-Around Nanosheet Oxide Semiconductor Transistor by Selective Crystallization of InGaOx for Performance and Reliability Enhancement.” 2025 Symposium on VLSI Technology and Circuits.
[2] S. A. Iyengar, M. Tripathi, A. Srivastava, et al. Glaphene: A Hybridization of 2D Silica Glass and Graphene. Adv. Mater. 2025, 2419136. https://doi.org/10.1002/adma.202419136
[3] D. Sydorenko, I. D. Kaganovich, A. V. Khrabrov, et al. Simulation of an inductively coupled plasma with a two-dimensional Darwin particle-in-cell code. Phys. Plasmas 1 April 2025; 32 (4): 043904. https://doi.org/10.1063/5.0241152
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