tag: 3D NAND

Keeping IC Packages Cool
By Laura Peters and Karen Heyman - 07 Jun, 2022 - Comments: 0

Placing multiple chips into a package side-by-side can alleviate thermal issues, but as companies dive further into die stacking and denser packaging to boost performance and reduce power, they are wrestling with a whole new set of heat-related issues. The shift to advanced packaging enables chipmakers to meet demands for increasing bandwidth, clock speeds, and power density for high perform... » read more

Selective etching of silicon nitride over silicon oxide using ClF3 /H2 remote plasma
By Technical Paper Link - 18 Apr, 2022 - Comments: 0

Researchers from Sungkyunkwan University, MIT and others present an option for selective etching. Abstract "Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiNx over SiOy has been investiga... » read more

Week In Review: Manufacturing, Test
By Linda Christensen - 15 Apr, 2022 - Comments: 0

Photonic Chips Go Big In Europe PhotonDelta, a collaborative end-to-end supply chain for the application of photonics chips, secured €1.1 billion in conditional funding for a six-year initiative. Investments from the Netherlands government and other organizations “will be used to build 200 startups, scale up production, create new applications for photonic chips, and develop infrastructure... » read more

Critical Moves: Advanced Logic Devices And CIS Benefit From Applications Using IRCD Metrology
By Nick Keller - 08 Feb, 2022 - Comments: 1

As 3D NAND continues to scale vertically — all in the name of increasing capacity and speed and reducing inefficiency and cost — maintaining channel hole critical dimension (CD) and shape uniformity becomes even more challenging. Faced with rising high-aspect ratios, addressing these challenges requires new inline non-destructive metrology to provide real-time process control. Infrared crit... » read more

Non-destructive Thickness Characterisation of 3D Multilayer Semiconductor Devices Using Optical Spectral Measurements and Machine Learning
By Technical Paper Link - 07 Feb, 2022 - Comments: 0

Abstract: "Three-dimensional (3D) semiconductor devices can address the limitations of traditional two-dimensional (2D) devices by expanding the integration space in the vertical direction. A 3D NOT-AND (NAND) flash memory device ispresently the most commercially successful 3D semiconductor device. It vertically stacks more than 100 semiconductor material layers to provide more storage capac... » read more

Outlook: DRAM, NAND, Next-Gen Memory
By Mark LaPedus - 18 Nov, 2021 - Comments: 0

Jim Handy, director at Objective Analysis, sat down with Semiconductor Engineering to talk about the 3D NAND, DRAM and next-generation memory markets. What follows are excerpts of that discussion. SE: How would you characterize the NAND market thus far in 2021? Handy: All chips are seeing unusual strength in 2021, but NAND flash and DRAM are doing what they usually do by exhibiting more e... » read more

More Errors, More Correction in Memories
By Bryon Moyer - 09 Nov, 2021 - Comments: 1

As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

Will Monolithic 3D DRAM Happen?
By Bryon Moyer - 09 Sep, 2021 - Comments: 1

As DRAM scaling slows, the industry will need to look for other ways to keep pushing for more and cheaper bits of memory. The most common way of escaping the limits of planar scaling is to add the third dimension to the architecture. There are two ways to accomplish that. One is in a package, which is already happening. The second is to sale the die into the Z axis, which which has been a to... » read more

What’s Ahead For DRAM, NAND?
By Mark LaPedus - 19 Aug, 2021 - Comments: 1

For the last year, the semiconductor industry has been in the midst of a boom cycle. But if you look close enough, there are mixed signals in the market, especially in memory. Still, it’s a banner year for semiconductors. In total, the semiconductor market is expected to grow by 18.1% in 2021, according to Semico Research. That compares to 6.6% growth in 2020, according to Semico. Today... » read more

Micron B47R 3D CTF CuA NAND Die, World’s First 176L (195T)
By Jeongdong Choe - 19 Aug, 2021 - Comments: 0

Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron 176L 3D NAND is one of the most groundbreaking technologies to date, and it is especially for the storage application such as data center, 5G, AI, cloud, intelligent edge, and mobile devices. Mi... » read more

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