tag: 5nm

Node Warfare?
By Mark LaPedus - 20 Sep, 2017 - Comments: 6

By Mark LaPedus & Ed Sperling GlobalFoundries uncorked a 12nm finFET process, which the company said will provide a 15% increase in density and more than 10% improvement in performance over the foundry's existing 14nm process. This is GlobalFoundries' second 12nm process. It announced a 12nm FD-SOI process called 12FDX last September, although it first mentioned a 12nm process back in J... » read more

Ruthenium Liners Give Way To Ruthenium Lines
By Katherine Derbyshire - 17 Aug, 2017 - Comments: 0

For several years now, integrated circuit manufacturers have been investigating alternative barrier layer materials for copper interconnects. As interconnect dimensions shrink, the barrier accounts for an increasing fraction of the total line volume. As previously reported, both cobalt and ruthenium have drawn substantial interest because they can serve as both barrier and seed layers, minimizi... » read more

What’s After FinFETs?
By Mark LaPedus - 24 Jul, 2017 - Comments: 3

Chipmakers are readying their next-generation technologies based on 10nm and/or 7nm finFETs, but it's still not clear how long the finFET will last, how long the 10nm and 7nm nodes for high-end devices will be extended, and what comes next. The industry faces a multitude of uncertainties and challenges at 5nm, 3nm and beyond. Even today, traditional chip scaling continues to slow as process ... » read more

Is 7nm The Last Major Node?
By Ed Sperling - 20 Jul, 2017 - Comments: 3

A growing number of design and manufacturing issues are prompting questions about what scaling will really look like beyond 10/7nm, how many companies will be involved, and which markets they will address. At the very least, node migrations will go horizontally before proceeding numerically. There are expected to be more significant improvements at 7nm than at any previous node, so rather th... » read more

Shrink Or Package?
By Ed Sperling - 19 Jun, 2017 - Comments: 0

Advanced packaging is rapidly becoming a mainstream option for chipmakers as the cost of integrating heterogeneous components on a single die continues to rise. Despite several years of buzz around this shift, the reality is that it has taken more than a half-century to materialize. Advanced [getkc id="27" kc_name="packaging"] began with IBM flip chips in the 1960s, and it got another boost ... » read more

Inside Chip R&D
By Mark LaPedus - 15 Jun, 2017 - Comments: 1

Semiconductor Engineering sat down to discuss R&D challenges, EUV and other topics with Luc Van den hove, president and chief executive of Imec, an R&D organization in Belgium. What follows are excerpts of that conversation. SE: Clearly, Moore’s Law is slowing down. The traditional process cadence is extending from 2 years to roughly 2.5 to 3 years. Yet, R&D is not slowing down, right? ... » read more

New BEOL/MOL Breakthroughs?
By Mark LaPedus - 15 Jun, 2017 - Comments: 1

Chipmakers are moving ahead with transistor scaling at advanced nodes, but it's becoming more difficult. The industry is struggling to maintain the same timeline for contacts and interconnects, which represent a larger portion of the cost and unwanted resistance in chips at the most advanced nodes. A leading-edge chip consists of three parts—the transistor, contacts and interconnects. The ... » read more

2.5D, ASICs Extend to 7nm
By Mark LaPedus - 13 Jun, 2017 - Comments: 2

The leading-edge foundry market is heating up. For example, GlobalFoundries, Intel, Samsung and TSMC have recently announced their new and respective processes. The new processes from vendors range anywhere from 10nm to 4nm, although the current battle is taking place at 10nm and/or 7nm. In fact, one vendor, GlobalFoundries, this week will describe more details about its previously-announced... » read more

System Bits: June 6
By Ann Mutschler - 06 Jun, 2017 - Comments: 0

Silicon nanosheet-based builds 5nm transistor To enable the manufacturing of 5nm chips, IBM, GLOBALFOUNDRIES, Samsung, and equipment suppliers have developed what they say is an industry-first process to build 5nm silicon nanosheet transistors. This development comes less than two years since developing a 7nm test node chip with 20 billion transistors. Now, they’ve paved the way for 30 billi... » read more

Samsung Unveils Scaling, Packaging Roadmaps
By Ed Sperling - 24 May, 2017 - Comments: 5

Samsung Foundry unveiled an aggressive roadmap that scales down to 4nm, and which includes a fan-out wafer-level packaging technology that bridges chips in the redistribution layer, 18nm FD-SOI, and a new organizational structure that allows the unit much greater autonomy as a commercial enterprise. The moves put [getentity id="22865" e_name="Samsung Foundry"] in direct competition with [get... » read more

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