tag: 7nm

IP Integration Challenges Increase
By Ed Sperling - 24 Jun, 2015 - Comments: 0

Semiconductor Engineering sat down with Chris Rowen, CTO of [getentity id="22032" e_name="Cadence"]'s IP group; Rob Aitken, an [getentity id="22186" comment="ARM"] fellow; Patrick Soheili, vice president of product management and corporate development at [getentity id="22242" e_name="eSilicon"]; Navraj Nandra, senior director of marketing for DesignWare analog and mixed-signal IP at [getentity ... » read more

Speeding Up E-beam Inspection
By Mark LaPedus - 18 Jun, 2015 - Comments: 0

Wafer inspection, the science of finding killer defects in chips, is reaching a critical juncture. Optical inspection, the workhorse technology in the fab, is being stretched to the limit at advanced nodes. And e-beam inspection can find tiny defects, but it remains slow in terms of throughput. So to fill the gap, the industry has been working on a new class of multiple beam e-beam inspectio... » read more

One-On-One: Thomas Caulfield
By Mark LaPedus - 21 May, 2015 - Comments: 0

Semiconductor Engineering sat down to talk about fabs, process technology and the equipment industry with Thomas Caulfield, senior vice president and general manager of Fab 8 at [getentity id="22819" comment="GlobalFoundries"]. Located in Saratoga County, N.Y., Fab 8 is GlobalFoundries’ most advanced 300mm wafer fab. What follows are excerpts of that discussion. SE: Last year, GlobalFoundr... » read more

Less Moore Means More Intelligence
By Brian Bailey - 23 Apr, 2015 - Comments: 3

It would seem as if the entire industry is flooding the forums with articles about [getkc id="74" comment="Moore's Law"], as it reaches its 50th birthday (April 19th) and that this represents the longest and most important exponential in the history of man. The numbers and that impact are everywhere and I do not intend to repeat them. There are lots of articles talking about when Moore’s law ... » read more

Big Changes At 10nm And Beyond
By Ed Sperling - 16 Apr, 2015 - Comments: 0

The move to 16/14nm finFETs is relatively straightforward. The move to 10nm and 7nm will be quite different. While double patterning with colors at 16/14nm has a rather steep learning curve, reports from chipmakers developing advanced chips is the technology and methodologies are manageable once engineering teams begin working with it. The hardest part is visualizing how different parts will... » read more

New Patterning Paradigm?
By Mark LaPedus - 16 Apr, 2015 - Comments: 0

Chip scaling is becoming more difficult at each process node, but the industry continues to find new and innovative ways to solve the problems at every turn. And so chipmakers continue to march down the various process nodes. But the question is for how much longer? In fact, at 16nm/14nm and beyond, chipmakers are finding new and different challenges, which, in turn, could slow IC scaling or br... » read more

Next EUV Challenge: Mask Inspection
By Mark LaPedus - 16 Apr, 2015 - Comments: 2

Extreme ultraviolet ([gettech id="31045" comment="EUV"]) lithography is still not ready for prime time, but the technology finally is moving in the right direction. The EUV light source, for example, is making progress after years of delays and setbacks. Now, amid a possible breakthrough in EUV, the industry is revisiting a nagging issue and asking a simple question: How do you inspect EUV p... » read more

How We’ll Get There from Here
By Brian Fuller - 09 Apr, 2015 - Comments: 0

The electronics industry is like a battleship with remarkable handling properties. I thought about it this week sitting at an industry event a day after stumbling across Neptune—the technology project, not the god. Those two experiences forced me to rethink some fundamental assumptions about system design and how the ecosystem responds to change. If you’ve not heard of Neptune, it�... » read more

5 Reasons EUV Will Or Won’t Be Used
By Michael Watts - 19 Mar, 2015 - Comments: 1

Digging into this subject, there are five metrics that count in a lithography tool: resolution, throughput, defects, overlay, and reliability. So what does the best data tell us about the current state and realistic prognosis for [gettech id="31045" comment="EUV"]. Semiconductor Engineering posed this question to Matt Colburn, senior manager for patterning research at [getentity id="22306" comm... » read more

3D Effects At 20nm And Beyond
By Ann Mutschler - 19 Mar, 2015 - Comments: 0

At the 20nm process node and below, attenuated phase shift masks (PSM) are used in the photolithography process, which results in approximately 70nm of topography. This now must be accounted for using 3D mask approximation. Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], explained that in terms of [getkc id="80" comment="lithography"], where simulation-based technologies are used,... » read more

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