tag: FDSOI

Non-Traditional Design of Dynamic Logic Gates and Circuits with FDSOI FETs
By Technical Paper Link - 19 May, 2023 - Comments: 0

A new technical paper titled "Non-Traditional Design of Dynamic Logics using FDSOI for Ultra-Efficient Computing" was published by researchers at University of Stuttgart, UC Berkeley, Indian Institute of Technology Kanpur, and TU Munich, with funding by the German Research Foundation. Abstract "In this paper, we propose a non-traditional design of dynamic logic circuits using Fully-Deplet... » read more

Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET" was published by researchers at Chungnam National University and Korea Polytechnic College. "This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silic... » read more

IEEE S3S 2019 — Characterization Challenges And Solutions For FDSOI Technologies
By PDF Solutions - 08 Jun, 2020 - Comments: 0

FDSOI technology has been proposed as an alternative device scaling path which offers benefits of tunable, superior electrostatics transistor while maintaining simplicity of planar integration. New device type and integration elements brought up challenges in device and process characterization and monitoring across the whole lifecycle of the technology. This paper presents successful applicati... » read more

Everything You Need to Know about FDSOI Technology
By Coventor - 20 Mar, 2019 - Comments: 0

Over the past decades, transistor feature size has continuously decreased, leading to an increase in performance and a reduction in power consumption. Consumers have reaped the benefits, with superior electronic devices that have become increasingly useful, valuable, faster and more efficient. In recent years, as transistor feature size has shrunk below 10nm, it has become progressively more di... » read more

FD-SOI: How Body Bias Creates Unique Differentiation
By GlobalFoundries - 21 Feb, 2019 - Comments: 0

Fully depleted silicon-on-insulator (FD-SOI) relies on a very unique substrate whose layer thicknesses are controlled at the atomic scale. FD-SOI offers remarkable transistor performance in terms of power, performance, area and cost tradeoffs (PPAC), making it possible to cover from low-power to high-performance digital applications with a single technology platform. FD-SOI delivers numerous un... » read more

Ultra-Low-Power SAR ADC in 22 nm FD-SOI Technology Using Body-Biasing
By Fraunhofer IIS/EAS - 12 Dec, 2018 - Comments: 0

Today’s sensor applications show a rising demand on miniaturized autonomous sensors nodes with extreme requirements on power dissipation. One core functionality of these sensor nodes is the conversion of analog sensor signals to digital data for post processing and data communication. In this work a 11-bit Successive Approximation Register (SAR) ADC with minimized power dissipation is develop... » read more

5 Issues Under The Foundry Radar
By Mark LaPedus - 16 Apr, 2015 - Comments: 0

In the foundry business, the leading-edge segment grabs most, if not all, of the headlines. Foundry vendors, of course, are ramping up 16nm/14nm finFET processes, with 10nm and 7nm in R&D. The leading-edge foundry business is sizable, but it’s not the only thing going on in the competitive arena. In fact, there are battles taking place in many other foundry segments, such as 2.5D/3D packag... » read more

Manufacturing Bits: March 17
By Mark LaPedus - 17 Mar, 2015 - Comments: 0

EUV source firm seeks help In 2012, a startup called Zplasma came out of stealth mode and introduced its first technology—a next-generation power source for extreme ultraviolet (EUV) lithography. But after much fanfare and hope, Zplasma has been unable to commercialize its EUV source technology. The company has also been unable to attract a development partner or outside funding. And t... » read more

Time To Look At SOI Again
By Mark LaPedus - 16 Oct, 2014 - Comments: 0

Chipmakers have the luxury of looking at several process options when developing chips at the 28nm node and beyond. Using bulk CMOS, for example, chipmakers can scale planar transistors down to 20nm. Then, at 20nm, planar runs out of gas due to the so-called short-channel effect. At that point, IC makers must migrate towards finFETs at 16nm/14nm and beyond. Another process option is fully... » read more

Manufacturing Bits: Oct. 14
By Mark LaPedus - 14 Oct, 2014 - Comments: 0

Toyota’s power steering IC Today’s cars are making use of more electronics. The increase in electronic content is driving the need for high temperature and high voltage chips. The electric power steering (EPS) system is one example. EPS provides power assist even when the engine is stopped. It also improves fuel economy compared to hydraulic power steering, according to automotive giant... » read more

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